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參數(shù)資料
| 型號(hào)： | GS820H32 |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 2Mb（64K x 32Bit) Synchronous Burst SRAM(2M位（64K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）) |
| 中文描述： | 2MB的（64K的x 32位）同步突發(fā)靜態(tài)存儲(chǔ)器（200萬位（64K的× 32位）同步靜態(tài)隨機(jī)存儲(chǔ)器（帶2位脈沖地址計(jì)數(shù)器）） |
| 文件頁(yè)數(shù)： | 7/23頁(yè) |
| 文件大?。?/td> | 342K |
| 代理商： | GS820H32 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)當(dāng)前第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)
Rev: 1.03 2/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
7/23
1999, Giga Semconductor, Inc.
D
GS820H32T/Q-150/138/133/117/100/66
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagramshows only supported (tested) synchronous state transitions. The diagrampresumes G is tied Low.
The upper portion of the diagramassumes active use of only the Enable (E
1,
E
2,
E
3
) and Write (B
A
, B
B
, B
C
, B
D
, BW and GW) control inputs
and that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagramtogether assume active use of only the Enable, Write and ADSC control inputs and assumes
ADSP is tied high and ADV is tied low.
3.
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| GS820H32AQ-133I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:64K x 32 2M Synchronous Burst SRAM |
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