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參數(shù)資料
| 型號： | GS820H32 |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 2Mb（64K x 32Bit) Synchronous Burst SRAM(2M位（64K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）) |
| 中文描述： | 2MB的（64K的x 32位）同步突發(fā)靜態(tài)存儲器（200萬位（64K的× 32位）同步靜態(tài)隨機(jī)存儲器（帶2位脈沖地址計(jì)數(shù)器）） |
| 文件頁數(shù)： | 18/23頁 |
| 文件大?。?/td> | 342K |
| 代理商： | GS820H32 |
Rev: 1.03 2/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
18/23
1999, Giga Semconductor, Inc.
D
GS820H32T/Q-150/138/133/117/100/66
CK
ADSP
ADV
GW
BW
G
Q1
A
D1
A
Q2
A
Q2
B
Q2
C
Q2
D
Single Read
Burst Read
tOE
tOHZ
tS tH
tS
tH
tH
tS tH
tS tH
tKH
DQa - DQd
B
A
- BW
D
tKL
tKC
tS
Single Write
ADSP is blocked by E inactive
tKQ
tS tH
Hi-Z
Pipelined SCD Read - Write Cycle Timing
WR1
ADSC
tS tH
ADSC initiated read
RD1
WR1
RD2
tS tH
A
0
-An
E
1
E
3
E
2
tS
tS tH
tS
E1 masks ADSP
E2 and E3 only sampled with ADSP and ADSC
Deselected with E3
tH
tH
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| GS832018GT-133 | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
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| GS832032GT-133I | Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:4700pF; Capacitance Tolerance:+/- 10%; Lead Pitch:7.5mm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Series:184 RoHS Compliant: Yes |
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| GS820H32A2T-138 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:64K x 32 2M Synchronous Burst SRAM |
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| GS820H32AQ-133I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:64K x 32 2M Synchronous Burst SRAM |
| GS820H32AQ-138 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:64K x 32 2M Synchronous Burst SRAM |
| GS820H32AQ-138I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:64K x 32 2M Synchronous Burst SRAM |
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