參數(shù)資料
型號: GS820E32Q-5I
廠商: Electronic Theatre Controls, Inc.
元件分類: DRAM
英文描述: 2M Synchronous Burst SRAM
中文描述: 200萬同步突發(fā)靜態(tài)存儲器
文件頁數(shù): 7/23頁
文件大?。?/td> 345K
代理商: GS820E32Q-5I
Rev: 1.03 2/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
7/23
1999, Giga Semconductor, Inc.
D
GS820E32T/Q-150/138/133/117/100/66
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagramshows only supported (tested) synchronous state transitions. The diagrampresumes G is tied Low.
The upper portion of the diagramassumes active use of only the Enable (E
1,
E
2,
E
3
) and Write (B
A
, B
B
, B
C
, B
D
, BW and GW) control inputs
and that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagramtogether assume active use of only the Enable, Write and ADSC control inputs and assumes
ADSP is tied high and ADV is tied low.
3.
相關PDF資料
PDF描述
GS820H32A 2Mb(64K x 32Bit) Synchronous Burst SRAM(2M位(64K x 32位)同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器))
GS820H32 2Mb(64K x 32Bit) Synchronous Burst SRAM(2M位(64K x 32位)同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器))
GS832018 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832018GT-133 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832018GT-133I 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
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