參數(shù)資料
型號(hào)： GS820E32Q-5I
廠商： Electronic Theatre Controls, Inc.
元件分類： DRAM
英文描述： 2M Synchronous Burst SRAM
中文描述： 200萬(wàn)同步突發(fā)靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù)： 13/23頁(yè)
文件大小： 345K
代理商： GS820E32Q-5I
Rev: 1.03 2/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
13/23
1999, Giga Semconductor, Inc.
D
GS820E32T/Q-150/138/133/117/100/66
AC Electrical Characteristics
Notes:
1.
2.
These parameters are sampled and are not 100% tested
ZZ is an asynchronous signal. However, In order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Parameter
Symbol
-150
Min
6.6
---
1.5
-138
Min
7.25
---
2
-133
Min
7.5
---
2
-117
Min
8.5
---
2
-100
Min
10
-66
Unit
Max
---
3.8
---
Max
---
4
---
Max
---
4
---
Max
---
4.5
---
Max
Min
12.5
Max
Pipeline
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
tKC
tKQ
tKQX
ns
ns
ns
5
6
2
2
Clock to Output in Low-Z
tLZ
1
tKC
tKQ
tKQX
1.5
---
2
---
2
---
2
---
2
2
ns
Flow-
Thru
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
10.5
---
3
---
9.0
---
15
---
3
---
9.7
---
15
---
3
---
10
---
15
---
3
---
11
---
15
20
ns
ns
ns
12
18
3
3
Clock to Output in Low-Z
tLZ
1
tKH
tKL
3
---
3
---
3
---
3
---
3
3
ns
Clock HIGH Time
Clock LOW Time
1.8
1.8
---
---
1.9
1.9
---
---
1.9
1.9
---
---
2
2
---
---
3
3
4
4
ns
ns
Clock to Output in High-Z
tHZ
1
tOE
1.5
3.8
1.5
4
1.5
4
1.5
4
5
6
ns
G to Output Valid
---
3.8
---
4
---
4
---
4
5
6
ns
G to output in Low-Z
tOLZ
1
0
---
0
---
0
---
0
---
0
0
ns
G to output in High-Z
tOHZ
1
tS
tH
---
4
---
4
---
4
---
4
5
6
ns
Setup time
Hold time
1.7
0.5
---
---
2
---
---
2
---
---
2
---
---
2
2
ns
ns
0.5
0.5
0.5
0.5
0.5
ZZ setup time
tZZS
2
5
---
5
---
5
---
5
---
5
5
ns
ZZ hold time
tZZH
2
tZZR
1
---
1
---
1
---
1
---
1
1
ns
ZZ recovery
20
---
20
---
20
---
20
---
20
20
ns
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GS820H32A 2Mb（64K x 32Bit) Synchronous Burst SRAM(2M位（64K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
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