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參數(shù)資料
| 型號(hào)： | GS820E32Q-5I |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | DRAM |
| 英文描述： | 2M Synchronous Burst SRAM |
| 中文描述： | 200萬同步突發(fā)靜態(tài)存儲(chǔ)器 |
| 文件頁數(shù)： | 10/23頁 |
| 文件大?。?/td> | 345K |
| 代理商： | GS820E32Q-5I |
Rev: 1.03 2/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
10/23
1999, Giga Semconductor, Inc.
D
GS820E32T/Q-150/138/133/117/100/66
Capacitance
(T
A
=25
o
C, f=1MH
Z
, V
DD
=3.3V)
Note: This parameter is sample tested.
Package Thermal Characteristics
Notes:
1.
Junction temperature is a function of SRAMpower dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
SCMI G-38-87.
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1.
2.
3.
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Control Input Capacitance
C
I
C
IN
C
OUT
V
DD
=3.3V
V
IN
=0V
V
OUT
=0V
3
4
pF
Input Capacitance
4
5
pF
Output Capacitance
6
7
pF
Rating
Layer Board
Symbol
TQFP Max
QFP Max
Unit
Notes
Junction to Ambient (at 200 lfm)
single
R
Θ
JA
R
Θ
JA
R
Θ
JC
40
TBD
°
C/W
°
C/W
°
C/W
1,2,4
Junction to Ambient (at 200 lfm)
four
24
TBD
1,2,4
Junction to Case (TOP)
9
TBD
3,4
20% tKC
V
SS
-2.0V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+-2.0V
50%
V
DD
V
IL
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