參數(shù)資料
型號(hào)： GS820E32A
廠商： GSI TECHNOLOGY
英文描述： 2Mb（64K x 32Bit) Synchronous Burst SRAM(2M位（64K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
中文描述： 2MB的（64K的x 32位）同步突發(fā)靜態(tài)存儲(chǔ)器（200萬(wàn)位（64K的× 32位）同步靜態(tài)隨機(jī)存儲(chǔ)器（帶2位脈沖地址計(jì)數(shù)器））
文件頁(yè)數(shù)： 9/23頁(yè)
文件大?。?/td> 344K
代理商： GS820E32A
Rev: 1.04 3/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
9/23
2000, Giga Semconductor, Inc.
E
GS820E32AT/Q-150/138/133/117/100/66
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute MaximumRatings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute MaximumRatings, for an extended period of time, may affect reliability of
this component.
Recommended Operating Conditions
Note:
1.
Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 2.75V
≤
VDDQ
≤
2.375V (i.e. 2.5V I/O)
and 3.6V
≤
VDDQ
≤
3.135V (i.e. 3.3V I/O) and quoted at whichever condition is worst case.
This device features input buffers compatible with both 3.3V and 2.5V I/O drivers.
Most speed grades and configurations of this device are offered in both Commercial and Industrial Temperature ranges. The part number of
Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated
for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be -2V > Vi < V
DD
+2V with a pulse width not to exceed 20% tKC.
2.
3.
4.
Symbol
Description
Value
Unit
V
DD
V
DDQ
V
CK
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
T
BIAS
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Voltage on Clock Input Pin
-0.5 to 4.6
V
-0.5 to V
DD
-0.5 to 6
V
V
Voltage on I/O Pins
-0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
-0.5 to V
DD
+0.5 (
≤
4.6 V max.)
+/- 20
V
Voltage on Other Input Pins
V
Input Current on Any Pin
mA
Output Current on Any I/O Pin
+/- 20
mA
Package Power Dissipation
1.5
W
Storage Temperature
-55 to 125
o
C
Temperature Under Bias
-55 to 125
o
C
Parameter
Symbol
Mn.
Typ.
Max.
Unit
Notes
Supply Voltage
V
DD
V
DDQ
V
IH
V
IL
T
A
T
A
3.135
3.3
3.6
V
DD
V
I/O Supply Voltage
2.375
2.5
V
1
Input High Voltage
1.7
---
V
DD
+0.3
0.8
V
2
Input Low Voltage
-0.3
---
V
°
C
°
C
2
Ambient Temperature (Commercial Range Versions)
0
25
70
3
Ambient Temperature (Industrial Range Versions)
-40
25
85
3
相關(guān)PDF資料
PDF描述
GS820E32T-6I 2M Synchronous Burst SRAM
GS820E32Q-100 2M Synchronous Burst SRAM
GS820E32Q-117 2M Synchronous Burst SRAM
GS820E32Q-133 2M Synchronous Burst SRAM
GS820E32Q-133I 2M Synchronous Burst SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS820E32AGT-133 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:64K x 32 2Mb Synchronous Burst SRAM
GS820E32AGT-133I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:64K x 32 2Mb Synchronous Burst SRAM
GS820E32AGT-166 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:64K x 32 2Mb Synchronous Burst SRAM
GS820E32AGT-166I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:64K x 32 2Mb Synchronous Burst SRAM
GS820E32AGT-180 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:64K x 32 2Mb Synchronous Burst SRAM
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