參數(shù)資料
型號(hào): GS816118D
廠商: Electronic Theatre Controls, Inc.
元件分類: DRAM
英文描述: 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
中文描述: 1M×18,512k×32,512k×36 18M位同步突發(fā)靜態(tài)存儲(chǔ)器
文件頁數(shù): 20/36頁
文件大?。?/td> 945K
代理商: GS816118D
GS816118(T/D)/GS816132(D)/GS816136(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.13 11/2004
20/36
1999, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested
ZZ is an asynchronous signal. However, In order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
AC Electrical Characteristics
Parameter
Symbol
-250
-225
-200
-166
-150
-133
Unit
Min
4.0
1.5
Max
2.5
Min
4.4
1.5
Max
2.7
Min
5.0
1.5
Max
3.0
Min
6.0
1.5
Max
3.4
Min
6.7
1.5
Max
3.8
Min
7.5
1.5
Max
4.0
Pipeline
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
tKC
tKQ
tKQX
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tS
tH
tKC
tKQ
tKQX
1.5
1.5
1.5
1.5
1.5
1.5
ns
Setup time
Hold time
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
1.2
0.2
5.5
3.0
5.5
1.3
0.3
6.0
3.0
6.0
1.4
0.4
6.5
3.0
6.5
1.5
0.5
7.0
3.0
7.0
1.5
0.5
7.5
3.0
7.5
1.5
0.5
8.5
3.0
8.5
ns
ns
ns
ns
ns
Flow
Through
Clock to Output in Low-Z
tLZ
1
tS
tH
tKH
tKL
3.0
3.0
3.0
3.0
3.0
3.0
ns
Setup time
Hold time
Clock HIGH Time
Clock LOW Time
Clock to Output in
High-Z
G to Output Valid
1.5
0.5
1.3
1.5
1.5
0.5
1.3
1.5
1.5
0.5
1.3
1.5
1.5
0.5
1.3
1.5
1.5
0.5
1.5
1.7
1.5
0.5
1.7
2
ns
ns
ns
ns
tHZ
1
1.5
2.3
1.5
2.5
1.5
3.0
1.5
3.0
1.5
3.0
1.5
3.0
ns
tOE
2.3
2.5
3.2
3.5
3.8
4.0
ns
G to output in Low-Z
tOLZ
1
0
0
0
0
0
0
ns
G to output in High-Z
tOHZ
1
2.3
2.5
3.0
3.0
3.0
3.0
ns
ZZ setup time
tZZS
2
5
5
5
5
5
5
ns
ZZ hold time
tZZH
2
tZZR
1
1
1
1
1
1
ns
ZZ recovery
20
20
20
20
20
20
ns
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