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參數(shù)資料
| 型號： | GS8160E32 |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 16Mb（512K x 36Bit）Sync Burst SRAM(16M位（512K x 36位）同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器)) |
| 中文描述： | 16Mb的（為512k × 36Bit）同步突發(fā)靜態(tài)存儲器（1,600位（為512k × 36位）同步靜態(tài)隨機(jī)存儲器（帶2位脈沖地址計數(shù)器）） |
| 文件頁數(shù)： | 26/26頁 |
| 文件大?。?/td> | 519K |
| 代理商： | GS8160E32 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁當(dāng)前第26頁
Rev: 2.07 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
26/26
1999, Giga Semiconductor, Inc.
Preliminary
GS8160E18/32/36T-225/200/180/166/150/133
0.18u 16M Sync SRAM Data Sheet Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content
Page;Revisions;Reason
GS8160E18T-150IT 1.00 9/
1999A;GS8160E18T-150IT
2.00 1/1999B
Content
Converted from 0.25u 3.3V process to 0.18u 2.5V process.
Master File Rev B
Added x72 Pinout.
Added GSI Logo.
Changed Flow-Through Read-Write cycle Timing Diagram for
accuracy
GS8160E18T- 2.00 11/
1999B;GS8160E18T 2.01 1/
2000C
Format
GS8160E18T 2.01 1/
2000C;GS8160E18 T 2.02 1/
2000D
Changed pin description in TQFP to match order of pins in
pinout.
GS18/362.0 1/2000DGS18/
362.03 2/2000E
Front page; Features - changed 2.5V I/O supply to 2.5V
or3.3V I/O supply; Core and Interface voltages - Changed
paragraph to include information for 3.3V;Completeness
Absolute Maximum Ratings; Changed VDDQ - Value: From: -
.05 to VDD : to : -.05 to 3.6; Completeness.
Recommended Operating Conditions;Changed: I/O Supply
Voltage- Max. from VDD to 3.6; Input High Voltage- Max. from
VDD +0.3 to 3.6; Same page - took out Note 1;Completeness
Electrical Characteristics - Added second Output High Voltage
line to table; completeness.
Note: There was not a Rev 2.02 for the 8160Z or the 8161Z.
Changed the value of ZZ recovery in the AC Electrical
Characteristics table on page 15 from 20 ns to 100 ns
GS18/362.03 2/2000E;
8160E18_r2_04
Content
8160E18_r2_04;
8160E18_r2_05
Content/Format
Added 225 MHz speed bin
Updated Pg. 1 table, AC Characteristics table, and Operating
Currents table to match 815xxx
Updated format to comply with Technical Publications
standards
Updated Capitance table—removed Input row and changed
Output row to I/O
8160E18_r2_05;
8160E18_r2_06
Content
8160E18_r2_06;
8160E18_r2_07
Content
Updated Features list on page 1
Completely reworked table on page 1
Updated Mode Pin Functions table on page 7
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| GS8160E36 | 16Mb（256K x 72Bit）Sync Burst SRAM(16M位（256K x 72位）同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器)) |
| GS8160F18 | 16Mb（1M x 18Bit）Sync Burst SRAM(16M位（1M x 18位）同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器)) |
| GS8160F32 | 16Mb（512K x 36Bit）Sync Burst SRAM(16M位（512K x 36位）同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器)) |
| GS8160F36 | 16Mb（256K x 72Bit）Sync Burst SRAM(16M位（256K x 72位）同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器)) |
| GS8160Z18 | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8160E32BGT-150 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 16MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays |
| GS8160E32BGT-150I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays |
| GS8160E32BGT-150IV | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays |
| GS8160E32BGT-150V | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays |
| GS8160E32BGT-200 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX32 6.5NS/3NS 100TQFP - Trays 制造商:GSI 功能描述: |
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