參數(shù)資料
型號(hào): GS8160E32
廠商: GSI TECHNOLOGY
英文描述: 16Mb(512K x 36Bit)Sync Burst SRAM(16M位(512K x 36位)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
中文描述: 16Mb的(為512k × 36Bit)同步突發(fā)靜態(tài)存儲(chǔ)器(1,600位(為512k × 36位)同步靜態(tài)隨機(jī)存儲(chǔ)器(帶2位脈沖地址計(jì)數(shù)器))
文件頁(yè)數(shù): 20/26頁(yè)
文件大?。?/td> 519K
代理商: GS8160E32
Rev: 2.07 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
20/26
1999, Giga Semiconductor, Inc.
Preliminary
GS8160E18/32/36T-225/200/180/166/150/133
Pipelined DCD Read Cycle Timing
Q1
A
Q3
A
Q2
D
Q2c
Q2
B
Q2
A
tKQ
tLZ
tOE
tOHZ
tOLZ
tKQX
tHZ
tKQX
CK
ADSP
ADSC
BW
G
GW
ADV
E
2
Burst Read
RD2
RD3
tKL
tS
tH
tH
tH
tS
tH
tH
tS tH
tS
tH
ADSC initiated read
Suspend Burst
E
1
masks ADSP
E
2
and E
3
only sampled with ADSP or ADSC
Deselected with E
2
Single Read
ADSP is blocked by E1 inactive
A
0
–An
B
A
–B
D
E
3
E
1
tKH
tKC
tS
tH
tS
tS
tH
DQ
A
–DQ
D
tS
tS
RD1
Hi-Z
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