參數(shù)資料
型號(hào): GS8151Z18
廠商: GSI TECHNOLOGY
英文描述: 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM)
中文描述: 16Mb的流水線和流量,通過(guò)同步唑的SRAM(1,600位流水線式和流通型同步唑靜態(tài)內(nèi)存)
文件頁(yè)數(shù): 19/27頁(yè)
文件大?。?/td> 683K
代理商: GS8151Z18
Rev: 1.01 1/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
19/27
2000, Giga Semiconductor, Inc.
Preliminary
GS8151Z18/36T-225/200/180/166/150/133
AC Electrical Characteristics
Parameter
Symbol
-225
-200
-180
-166
-150
-133
Unit
Min
4.4
1.5
Max
2.5
Min
5.0
1.5
Max
3.0
Min
5.5
1.5
Max
3.2
Min
6.0
1.5
Max
3.5
Min
6.7
1.5
Max
3.8
Min
7.5
1.5
Max
4.0
Pipeline
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
tKC
tKQ
tKQX
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tKC
tKQ
tKQX
1.5
1.5
1.5
1.5
1.5
1.5
ns
Flow
Through
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
8.5
3.0
7.0
10.0
3.0
7.5
10.0
3.0
8.0
10.0
3.0
8.5
10.0
3.0
10.0
15.0
3.0
11.0
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tKH
tKL
3.0
3.0
3.0
3.0
3.0
3.0
ns
Clock HIGH Time
Clock LOW Time
1.3
1.5
1.3
1.5
1.3
1.5
1.3
1.5
1.5
1.7
1.7
2
ns
ns
Clock to Output in High-Z
tHZ
1
tOE
1.5
2.5
1.5
3.0
1.5
3.2
1.5
3.5
1.5
3.8
1.5
4.0
ns
G to Output Valid
2.5
3.2
3.2
3.5
3.8
4.0
ns
G to output in Low-Z
tOLZ
1
0
0
0
0
0
0
ns
G to output in High-Z
tOHZ
1
tS
tH
2.5
3.0
3.2
3.5
3.8
4.0
ns
Setup time
Hold time
1.5
0.5
1.5
0.5
1.5
0.5
1.5
0.5
1.5
0.5
1.5
0.5
ns
ns
ZZ setup time
tZZS
2
5
5
5
5
5
5
ns
ZZ hold time
tZZH
2
tZZR
1
1
1
1
1
1
ns
ZZ recovery
100
100
100
100
100
100
ns
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