參數(shù)資料
型號(hào)： GS815136
廠商： GSI TECHNOLOGY
英文描述： 16Mb（512K x 36Bit) Sync Burst SRAM(16M位（512K x 36位it)同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
中文描述： 16Mb的（為512k × 36Bit）同步突發(fā)靜態(tài)存儲(chǔ)器（1,600位（為512k × 36位有）同步靜態(tài)隨機(jī)存儲(chǔ)器（帶2位脈沖地址計(jì)數(shù)器））
文件頁(yè)數(shù)： 22/32頁(yè)
文件大小： 583K
代理商： GS815136
Rev: 1.01 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
22/32
2000, Giga Semiconductor, Inc.
Preliminary
GS815118/36T-225/200/180/166/150/133
Sleep Mode Timing Diagram
Application Tips
Single and Dual Cycle Deselect
SCD devices force the use of “dummy read cycles” (read cycles that are launched normally but that are ended with the output
drivers inactive) in a fully synchronous environment. Dummy read cycles waste performance but their use usually assures there
will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs do not waste bandwidth on
dummy cycles and are logically simpler to manage in a multiple bank application (wait states need not be inserted at bank address
boundary crossings) but greater care must be exercised to avoid excessive bus contention.
JTAG Port Operation
Overview
The JTAG Port on this RAM operates in a manner consistent with IEEE Standard 1149.1-1990, a serial boundary scan interface
standard (commonly referred to as JTAG), but does not implement all of the functions required for 1149.1 compliance. Unlike
JTAG implementations that have been common among SRAM vendors for the last several years, this implementation does offer a
form of EXTEST, known as Clock Assisted EXTEST, reducing or eliminating the “hand coding” that has been required to
overcome the test program compiler errors caused by previous non-compliant implementations. The JTAG Port interfaces with
conventional 2.5 V CMOS logic level signaling.
Disabling the JTAG Port
It is possible to use this device without utilizing the JTAG port. The port is reset at power-up and will remain inactive unless
clocked. TCK, TDI, and TMS are designed with internal pull-up circuits.To assure normal operation of the RAM with the JTAG
Port unused, TCK, TDI, and TMS may be left floating or tied to either V
DD
or V
SS
. TDO should be left unconnected.
CK
ADSP
ADSC
tH
tKH tKL
tKC
tS
ZZ
tZZR
tZZH
tZZS
~
~
~
~
Snooze
相關(guān)PDF資料
PDF描述
GS815118 16Mb（1M x 18Bit) Sync Burst SRAM(16M位（1M x 18位)同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
GS8151E18 16Mb（1M x 18Bit) Sync Burst SRAM(16M位（1M x 18位)同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
GS8151E36 16Mb（512K x 36Bit) Sync Burst SRAM(16M位（512K x 36位)同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
GS8151Z18 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM)
GS8151Z36 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM)
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