參數(shù)資料
型號(hào): GS815136
廠商: GSI TECHNOLOGY
英文描述: 16Mb(512K x 36Bit) Sync Burst SRAM(16M位(512K x 36位it)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
中文描述: 16Mb的(為512k × 36Bit)同步突發(fā)靜態(tài)存儲(chǔ)器(1,600位(為512k × 36位有)同步靜態(tài)隨機(jī)存儲(chǔ)器(帶2位脈沖地址計(jì)數(shù)器))
文件頁(yè)數(shù): 17/32頁(yè)
文件大?。?/td> 583K
代理商: GS815136
Rev: 1.01 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
17/32
2000, Giga Semiconductor, Inc.
Preliminary
GS815118/36T-225/200/180/166/150/133
CK
ADSP
ADSC
ADV
GW
BW
WR2
WR3
WR1
WR1
WR2
WR3
tKC
Single Write
Burst Write
t
KL
t
KH
tS tH
tS tH
tS tH
tS tH
tS tH
tStH
tS tH
Write specified byte for 2
A
and all bytes for 2
B
, 2
C
& 2
D
ADV must be inactive for ADSP Write
ADSC initiated write
ADSP is blocked by E inactive
A
0
–An
B
A
–B
D
DQ
A
–DQ
D
Write
Deselected
Write Cycle Timing
E
1
tS tH
E
1
only sampled with ADSP or ADSC
E
1
masks ADSP
G
D2
A
D2
B
D2
C
D2
D
D3
A
D1
A
Hi-Z
tS tH
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