參數(shù)資料
型號(hào): GS81032A
廠商: GSI TECHNOLOGY
英文描述: 1Mb(32K x 32Bit)Synchronous Burst SRAM(1M位(32K x 32位)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
中文描述: 1兆(32KX8的32位)同步突發(fā)靜態(tài)存儲(chǔ)器(100萬位(32K的× 32位)同步靜態(tài)隨機(jī)存儲(chǔ)器(帶2位脈沖地址計(jì)數(shù)器))
文件頁數(shù): 8/23頁
文件大小: 756K
代理商: GS81032A
Rev: 1.00 12/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
8/23
2000, Giga Semiconductor, Inc.
GS81032AT/Q-150/138/133/117/100/66
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (read cycles with G high) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy read cycles increment the address counter just like normal read cycles.
Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off, and for incoming data to meet
Data Input Set Up Time.
3.
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