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參數(shù)資料
| 型號(hào)： | GP801DDM18 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Hi-Reliability Dual Switch Low VCESAT IGBT Module |
| 中文描述： | 800 A, 1800 V, N-CHANNEL IGBT |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大小： | 158K |
| 代理商： | GP801DDM18 |
GP801DCM18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/10
TYPICAL CHARACTERISTICS
0
200
400
600
1200
1400
1600
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V
ce
- (V)
C
c
V
ge
= 20/15/12/10V
Common emitter
T
case
= 25
C
1000
800
Fig.3 Typical output characteristics
Fig.4 Typical output characteristics
0
200
400
600
1200
1400
1600
0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, V
ce
- (V)
C
c
V
ge
= 20/15/12/10V
Common emitter
T
case
= 125
C
1000
800
Fig.5 Typical switching energy vs collector current
0
800
100
200
Collector current, I
C
- (A)
0
100
700
T
O
T
case
= 125
C
V
GE
= ±15V
V
CE
= 800V
R
g
= 2.2
E
OFF
E
ON
E
REC
200
300
400
500
600
1000
800
9
00
300
400
500
600
700
Fig.6 Typical switching energy vs gate resistance
0
200
400
600
800
1000
1200
1400
0
1
2
3
4
5
6
7
8
9
10
Gate resistance, R
G
- (Ohms)
E
E
ON
E
OFF
E
REC
T
case
= 125C
V
GE
= ±15V
V
CE
= 900V
I
C
= 800A
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