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參數(shù)資料
| 型號(hào)： | GP801DDM18 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Hi-Reliability Dual Switch Low VCESAT IGBT Module |
| 中文描述： | 800 A, 1800 V, N-CHANNEL IGBT |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 158K |
| 代理商： | GP801DDM18 |
GP801DCM18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
3/10
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
±
20V, V
CE
= 0V
I
C
= 40mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 800A
V
GE
= 15V, I
C
= 800A, , T
case
= 125C
DC
t
p
= 1ms
I
F
= 800A
I
F
= 800A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
Units
mA
mA
μ
A
V
V
V
A
A
V
V
nF
nH
Max.
1
25
4
6.5
3.2
4
800
1600
2.5
2.6
-
-
Typ.
-
-
-
5.5
2.6
3.3
-
-
2.2
2.3
90
20
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| GP801DDS18 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Dual Switch Low VCE(SAT) IGBT Module |
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