參數(shù)資料
型號(hào)： GP801DDM18
廠商： DYNEX SEMICONDUCTOR LTD
元件分類： 功率晶體管
英文描述： Hi-Reliability Dual Switch Low VCESAT IGBT Module
中文描述： 800 A, 1800 V, N-CHANNEL IGBT
文件頁(yè)數(shù)： 4/10頁(yè)
文件大?。?/td> 158K
代理商： GP801DDM18
GP801DCM18
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
μ
C
A
mJ
Max.
1200
350
600
400
300
400
240
-
-
Typ.
1000
250
500
300
200
300
180
450
120
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 800A
V
GE
=
±
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 2.2
L ~ 100nH
I
F
= 800A, V
R
= 50% V
CES
,
dI
F
/dt = 3500A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
μ
C
A
mJ
Max.
1400
400
700
550
350
550
400
-
-
Typ.
1200
300
600
400
250
450
300
525
190
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 800A
V
GE
=
±
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 2.2
L ~ 100nH
I
F
= 800A, V
R
= 50% V
CES
,
dI
F
/dt = 3000A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GP801DDS18 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Dual Switch Low VCE(SAT) IGBT Module
GP801FSM18 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Hi-Reliability Single Switch Low VCE(SAT) IGBT Module
GP8021-7R 制造商:Power-One 功能描述:DCDC - Bulk
GP80AAAH 制造商:GP BATTERIES 功能描述:BATTERY 7/5AAA 1.2V TAGGED
GP80LAH1A1P 制造商:GP BATTERIES 功能描述:BATTERY NIMH 1.2V 18210
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