參數(shù)資料
型號: GP1600FSM12
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: 功率晶體管
英文描述: Single Switch IGBT Module Advance Information
中文描述: 1600 A, 1200 V, N-CHANNEL IGBT
文件頁數(shù): 5/10頁
文件大?。?/td> 139K
代理商: GP1600FSM12
GP1600FSM12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/10
CURVES
Fig.5 Typical output characteristics
Fig.6 Typical output characteristics
Fig.7 Typical turn-on energy vs collector current
Fig.8 Typical turn-on energy vs collector current
0
400
800
1200
2400
2800
3200
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V
ce
- (V)
C
C
V
ge
= 20/15/12/10V
Common emitter
T
case
= 25
C
2000
1600
0
400
800
1200
2400
2800
3200
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V
ce
- (V)
C
C
V
ge
= 20/15/12/10V
Common emitter
T
case
= 125
C
2000
1600
0
50
100
150
200
250
300
350
400
0
200
400
600
800
1000
1200
1400
1600
Collector current, I
C
- (A)
T
o
A : R
g
= 7
B : R
g
= 4.7
C : R
g
= 3.3
A
B
C
Conditions:
T
case
= 25
C,
V
CE
= 600V,
V
GE
= 15V
0
50
100
150
200
250
300
350
400
450
0
200
400
600
800
1000
1200
1400
1600
Collector current, I
C
- (A)
T
o
A : R
g
= 7
B : R
g
= 4.7
C : R
g
= 3.3
A
B
C
Conditions:
T
case
= 125
C,
V
CE
= 600V,
V
GE
= 15V
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