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參數(shù)資料
| 型號(hào)： | GP1600FSM12 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Single Switch IGBT Module Advance Information |
| 中文描述： | 1600 A, 1200 V, N-CHANNEL IGBT |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大小： | 139K |
| 代理商： | GP1600FSM12 |
GP1600FSM12
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
THERMAL AND MECHANICAL RATINGS
Symbol
Conditions
DC junction to case
o
C/kW
9
Max.
-
Min.
Parameter
Units
R
th(j-c)
Thermal resistance - transistor
T
stg
Storage temperature range
Transistor
o
C
150
125
-
–40
R
th(c-h)
Thermal resistance - Case to heatsink
(per module)
Mounting torque 5Nm
(with mounting grease)
8
-
-
Mounting - M6
Nm
5
-
-
o
C/kW
T
j
Junction temperature
o
C
Screw torque
Diode
o
C
125
-
Electrical connections - M4
Nm
2
-
Electrical connections - M8
Nm
10
-
Thermal resistance - diode
DC junction to case
o
C/kW
20
-
-
R
th(j-c)
V
CES
Collector-emitter voltage
-
Test Conditions
Symbol
I
C
Gate-emitter voltage
V
GE
= 0V
1200
Units
V
±
20
Max.
Parameter
Collector current
13.9
Maximum power dissipation
P
max
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Isolation voltage
V
isol
V
2500
V
V
GES
I
CM
kW
T
case
= 25C (Transistor)
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
DC, T
case
= 82C
1600
A
1ms, T
case
= 112C
A
3200
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