參數(shù)資料
型號(hào): GFD50N03A
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 78A I(D) | TO-252AA
中文描述: 晶體管| MOSFET的| N溝道| 30V的五(巴西)直|第78A(?。﹟對(duì)252AA
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 118K
代理商: GFD50N03A
Electrical Characteristics
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
30
V
Gate Threshold Voltage
V
GS(th)
1.0
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= ±20V
±100
nA
Zero Gate Voltage Drain Current
On-State Drain Current
(1)
I
DSS
V
DS
= 30V, V
GS
= 0V
1.0
μ
A
I
D(on)
V
DS
5V, V
GS
= 10V
50
A
Drain-Source On-State Resistance
(1)
R
DS(on)
V
GS
= 10V, I
D
= 15A
7.1
9
m
V
GS
= 4.5V, I
D
= 13A
10
12
Forward Transconductance
(1)
g
fs
V
DS
= 15V, I
D
= 15A
50
S
Dynamic
Total Gate Charge
Q
g
V
DS
=15V
,
V
GS
=5V, I
D
=15A
31
43
60
84
Gate-Source Charge
Q
gs
V
DS
= 15V, V
GS
= 10V
I
D
= 15A
9
nC
Gate-Drain Charge
Q
gd
8.5
Turn-On Delay Time
t
d(on)
13
26
Rise Time
t
r
V
DD
= 15V, R
L
= 15
I
D
1A, V
GEN
= 10V
R
G
= 6
16
29
Turn-Off Delay Time
t
d(off)
94
132
ns
Fall Time
t
f
38
57
Input Capacitance
C
iss
V
GS
= 0V
V
DS
= 15V
f = 1.0MH
Z
3240
Output Capacitance
C
oss
625
pF
Reverse Transfer Capacitance
C
rss
285
Source-Drain Diode
Max Diode Forward Current
Diode Forward Voltage
(1)
I
S
20
A
V
SD
I
S
= 20A, V
GS
= 0V
0.85
1.3
V
Note:
(1) Pulse test; pulse width
300
μ
s, duty cycle
2%
GFD50N03
N-Channel Enhancement-Mode MOSFET
G
D
S
V
IN
V
DD
V
GEN
R
G
R
D
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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