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參數(shù)資料
| 型號： | GFB75N03 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 75A條（?。﹟對263AB |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 82K |
| 代理商： | GFB75N03 |
Electrical Characteristics
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
μ
A
30
—
—
V
Drain-Source On-State Resistance
(2)
R
DS(on)
V
GS
= 10V, I
D
= 38A
—
5.8
6.5
m
V
GS
= 4.5V, I
D
= 31A
—
8.5
9.5
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
1.0
—
3.0
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V, V
GS
= 0V
—
—
1.0
μ
A
Gate-Body Leakage
On-State Drain Current
(2)
Forward Transconductance
(2)
I
GSS
V
GS
= ±20V, V
DS
= 0V
—
—
±100
nA
I
D(on)
V
DS
≥
5V, V
GS
= 10V
75
—
—
A
g
fs
V
DS
= 15V, I
D
= 38A
—
61
—
S
Dynamic
Total Gate Charge
Q
g
V
DS
=15V, I
D
=38A, V
GS
=5V
—
—
32.5
63
46
90
Gate-Source Charge
Q
gs
V
DS
= 15V, V
GS
= 10V
—
11
—
nC
Gate-Drain Charge
Q
gd
I
D
= 38A
—
11
—
Turn-On Delay Time
t
d(on)
—
13
26
Turn-On Rise Time
t
r
V
DD
= 15V, R
L
= 15
I
D
1A, V
GEN
= 10V
R
G
= 6
—
16
29
Turn-Off Delay Time
t
d(off)
—
94
132
ns
Turn-Off Fall Time
t
f
—
38
57
Input Capacitance
C
iss
—
3240
—
Output Capacitance
C
oss
V
DS
= 15V, V
GS
= 0V
—
625
—
pF
Reverse Transfer Capacitance
C
rss
f = 1.0MH
Z
—
285
—
Source-Drain Diode
Max. Diode Forward Current
I
S
—
—
—
75
A
Diode Forward Voltage
V
SD
I
S
= 38A, V
GS
= 0V
—
0.9
1.3
V
Notes:
(1) Maximum DC current limited by
the package
(2) Pulse test; pulse width
≤
300
μ
s,
duty cycle
≤
2%
GFB75N03
N-Channel Enhancement-Mode MOSFET
G
D
S
V
IN
V
DD
V
GS
R
GEN
R
L
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching Test Circuit
Switching Waveforms
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