參數(shù)資料
型號: GFB65N02
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 65A I(D) | TO-263AB
中文描述: 晶體管| MOSFET的| N溝道| 20V的五(巴西)直|第65A條(?。﹟對263AB
文件頁數(shù): 3/4頁
文件大小: 84K
代理商: GFB65N02
GFB65N02
N-Channel Enhancement-Mode MOSFET
0
20
40
80
0
1
2
3
4
5
Fig. 1 – Output Characteristics
I
D
V
DS
-- Drain-to-Source Voltage (V)
0
0.01
0.015
0.005
0.02
0
20
40
60
80
Fig. 4 – On-Resistance
vs. Drain Current
R
D
)
I
D
-- Drain Current (A)
0
10
20
40
30
50
60
70
1
2
3
4
5
Fig. 2 – Transfer Characteristics
I
D
60
2.5V
1.2
1.4
1.6
0.8
1
--
50
--
25
25
50
75
100
125
150
0
R
D
(
T
J
-- Junction Temperature (
°
C)
Fig. 5 – On-Resistance
vs. Junction Temperature
V
GS
= 10V
I
D
= 32A
T
J
= 125
°
C
--55
°
C
3.0V
4.0V
3.5V
25
°
C
V
DS
= 10V
V
GS
= 4.5V
V
GS
= 10.0V
V
GS
-- Gate-to-Source Voltage (V)
0.8
0.9
0.6
0.7
0.5
1
1.1
1.2
--
50
--
25
25
50
75
100
125
150
0
V
G
(
T
J
-- Junction Temperature (
°
C)
Fig. 3 – Threshold Voltage
vs. Temperature
I
D
= 250
μ
A
V
GS
= 4.5V, 5.0V, 6.0V, 10.0 V
0
0.01
0.02
0.03
0.04
0.05
2
4
6
8
10
Fig. 6 – On-Resistance
vs. Gate-to-Source Voltage
R
D
)
V
GS
-- Gate-to-Source Voltage (V)
I
D
= 32A
T
J
= 125
°
C
T
J
= 25
°
C
Ratings and
Characteristic Curves
(T
A
= 25
°
C unless otherwise noted)
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