- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370317 > GF4126 TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 7.2A I(D) | SO PDF資料下載
參數(shù)資料
| 型號： | GF4126 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 7.2A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的| N溝道| 20V的五（巴西）直| 7.2AI（四）|蘇 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 153K |
| 代理商： | GF4126 |
Electrical Characteristics
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= 0V, V
GS
=
±
8V
20
–
–
V
Gate Threshold Voltage
V
GS(th)
0.6
–
–
V
Gate-Body Leakage
I
GSS
–
–
±
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20V, V
GS
= 0V
–
–
1.0
μ
A
On-State Drain Current
(2)
I
D(on)
V
DS
≥
5V, V
GS
= 4.5V
20
–
–
A
Drain-Source On-State Resistance
(2)
R
DS(on)
V
GS
= 4.5V, I
D
= 7.2A
–
22
30
m
V
GS
= 2.5V, I
D
= 6.2A
–
28
40
Forward Transconductance
(2)
g
fs
V
DS
= 10V, I
D
= 7.2A
–
24
–
S
Dynamic
Total Gate Charge
Q
g
–
13
20
Gate-Source Charge
Q
gs
V
DS
= 10V, V
GS
= 4.5V
–
2.3
–
nC
Gate-Drain Charge
Q
gd
I
D
= 7.2A
–
3
–
Turn-On Delay Time
t
d(on)
–
11
22
Rise Time
t
r
V
DD
= 10V, R
L
= 10
I
D
≈
1A, V
GEN
= 4.5V
R
G
= 6
–
15
30
Turn-Off Delay Time
t
d(off)
–
43
65
ns
Fall Time
t
f
–
22
35
Input Capacitance
C
iss
V
GS
= 0V
–
1240
–
Output Capacitance
C
oss
V
DS
= 10V
–
200
–
pF
Reverse Transfer Capacitance
C
rss
f = 1.0MH
Z
–
120
–
Source-Drain Diode
Max. Diode Forward Current
I
S
—
–
–
1.7
A
Diode Forward Voltage
(2)
V
SD
I
S
= 1.7A, V
GS
= 0V
–
0.7
1.3
V
Notes:
(1) Surface mounted on FR4 board, t
≤
10 sec.
(2) Pulse test; pulse width
≤
300
μ
s, duty cycle
≤
2%
GF4126
N-Channel Enhancement-Mode MOSFET
G
D
S
V
IN
V
DD
V
GEN
R
G
R
D
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GF4410 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SO |
| GF4412 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7A I(D) | SO |
| GF4420 | TRANSISTOR | MOSFET | N-CHANNEL | 12.5A I(D) | SO |
| GF4425 | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 11A I(D) | SO |
| GFB60N03 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 60A I(D) | TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GF4126\5B | 功能描述:MOSFET SO-8 N-CH 20V 7.2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| GF42 | 制造商:EUROQUARTZ 制造商全稱:EUROQUARTZ limited 功能描述:11.4 x 9.6 x 2.5mm 4 pad SMD |
| GF-423-0017 | 制造商:CW Industries 功能描述:SWITCH SLIDE SPST 4A SOLD 125V |
| GF-423-0018 | 制造商:CW Industries 功能描述:SWITCH SLIDE SPST STAGGERD 125V |
| GF42R075NRM | 制造商:THINKING 制造商全稱:Thinking Electronic Industrial Co.,Ltd 功能描述:SMD 2-Electrode 44.2 mm Type |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。