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參數(shù)資料
| 型號(hào)： | GE28F128W30B90 |
| 英文描述： | CHIP RESISTOR |
| 中文描述： | 的EEPROM | FLASH動(dòng)畫(huà)| 8M × 16位|的CMOS | BGA封裝| 60PIN |塑料 |
| 文件頁(yè)數(shù)： | 57/91頁(yè) |
| 文件大小： | 994K |
| 代理商： | GE28F128W30B90 |
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1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O
Datasheet
57
I
PPS
(I
PPWS
,
I
PPES
)
V
PP
Standby
V
PP
Program Suspend
V
PP
Erase Suspend
3
0.2
5
0.2
5
μA
V
PP
<
V
CC
I
PPR
V
PP
Read
2
15
2
15
μA
V
PP
≤
V
CC
I
PPW
V
PP
Program
4
0.05
0.10
0.05
0.10
mA
V
= V
PP1,
Program in
Progress
8
22
16
37
V
= V
PP2,
Program in
Progress
I
PPE
V
PP
Erase
4
0.05
0.10
0.05
0.10
mA
V
= V
PP1,
Erase in
Progress
8
22
8
22
V
= V
PP2,
Erase in
Progress
NOTES:
1. All currents are RMS unless noted. Typical values at typical V
, T
= +25°C.
2. Automatic Power Savings (APS) reduces I
CCR
to approximately standby levels in static operation. See
I
specification for details.
3. Sampled, not 100% tested.
4. V
CC
read + program current is the sum of V
CC
read and V
CC
program currents.
5. V
CC
read + erase current is the sum of V
6. I
CCES
is specified with device deselected. If device is read while in erase suspend, current is I
CCES
plus
I
CCR
.
7. V
PP
<
= V
inhibits erase and program operations. Don’t use V
and V
outside their valid ranges.
8. V
IL
can undershoot to –0.4V and V
can overshoot to V
CCQ
+0.4V for durations of 20 ns or less.
9. If V
>V
the input load current increases to 10 μA max.
10.ICCS is the average current measured over any 5ms time interval 5
μ
s after a CE# de-assertion.
11.Refer to section
Section 9.2, “Automatic Power Savings (APS)” on page 52
for I
CCAPS
measurement
details.
12.TBD values are to be determined pending silicon characterization.
Table 19. DC Current Characteristics (Sheet 2 of 2)
Sym
Parameter
(1)
Note
V
CCQ
= 3.0 V
Unit
Test Condition
32/64 Mbit
128 Mbit
Typ
Max
Typ
Max
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相關(guān)代理商/技術(shù)參數(shù) |
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| GE28F128W30T90 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:EEPROM|FLASH|8MX16|CMOS|BGA|60PIN|PLASTIC |
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