參數(shù)資料
型號(hào)： GE28F128W30B90
英文描述： CHIP RESISTOR
中文描述： 的EEPROM | FLASH動(dòng)畫(huà)| 8M × 16位|的CMOS | BGA封裝| 60PIN |塑料
文件頁(yè)數(shù)： 4/91頁(yè)
文件大?。?/td> 994K
代理商： GE28F128W30B90
28F320W30, 28F640W30, 28F128W30
4
Datasheet
7.1.3
7.1.4
7.1.5
7.1.6
7.1.7
Protection Register ..............................................................................................................39
7.2.1
Reading the Protection Register.............................................................................40
7.2.2
Programing the Protection Register........................................................................40
7.2.3
Locking the Protection Register..............................................................................41
VPP Protection ....................................................................................................................42
Set Configuration Register
................................................................................................43
8.1
Read Mode (CR[15])............................................................................................................45
8.2
First Access Latency Count (CR[13:11]) .............................................................................45
8.3
WAIT Signal Polarity (CR[10]).............................................................................................47
8.4
WAIT Signal Function..........................................................................................................47
8.5
Data Hold (CR[9])................................................................................................................48
8.6
WAIT Delay (CR[8]).............................................................................................................49
8.7
Burst Sequence (CR[7]).......................................................................................................49
8.8
Clock Edge (CR[6])..............................................................................................................51
8.9
Burst Wrap (CR[3]) ..............................................................................................................51
8.10 Burst Length (CR[2:0]).........................................................................................................52
Power Consumption
.............................................................................................................52
9.1
Active Power........................................................................................................................52
9.2
Automatic Power Savings (APS) .........................................................................................52
9.3
Standby Power ....................................................................................................................53
9.4
Power-Up/Down Characteristics..........................................................................................53
9.4.1
System Reset and RST# ........................................................................................53
9.4.2
VCC, VPP, and RST# Transitions ..........................................................................53
9.5
Power Supply Decoupling....................................................................................................54
10.0 Thermal and DC Characteristics
.....................................................................................54
10.1 Absolute Maximum Ratings.................................................................................................54
10.2 Operating Conditions...........................................................................................................55
10.3 DC Current Characteristics..................................................................................................56
10.4 DC Voltage Characteristics..................................................................................................58
11.0 AC Characteristics
................................................................................................................59
11.1 Read Operations .................................................................................................................59
11.2 AC Write Characteristics......................................................................................................69
11.3 Erase and Program Times...................................................................................................73
11.4 Reset Specifications ............................................................................................................74
11.5 AC I/O Test Conditions........................................................................................................75
11.6 Device Capacitance.............................................................................................................76
Appendix A
Write State Machine States
.............................................................................77
Appendix B
Common Flash Interface
.................................................................................80
Lock-Down..............................................................................................................37
Block Lock Status ...................................................................................................38
Lock During Erase Suspend...................................................................................38
Status Register Error Checking ..............................................................................38
WP# Lock-Down Control ........................................................................................39
7.2
7.3
8.0
9.0
相關(guān)PDF資料
PDF描述
GE28F128W30T90 EEPROM|FLASH|8MX16|CMOS|BGA|60PIN|PLASTIC
GE28F640W30B70 EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
GE28F640W30B85 EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
GE28F640W30T70 EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
GE28F640W30T85 EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GE28F128W30T90 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:EEPROM|FLASH|8MX16|CMOS|BGA|60PIN|PLASTIC
GE28F160B3BC70 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
GE28F160B3BC80 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
GE28F160B3TC70 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
GE28F160B3TC80 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*