- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385288 > GA200SA60UP (VISHAY SEMICONDUCTORS) TRANSISTOR 200 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor PDF資料下載
參數(shù)資料
| 型號： | GA200SA60UP |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 200 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors N-Ch 600 Volt 100A |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 149K |
| 代理商： | GA200SA60UP |
GA200SA60UP
Vishay Semiconductors
www.vishay.com
Revision: 26-Oct-11
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
6
Document Number: 94364
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc95036
Packaging information
www.vishay.com/doc95037
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Insulated Gate Bipolar Transistor (IGBT)
Generation 4, IGBT silicon, DBC construction
Current rating (200 = 200 A)
Single switch, no diode
SOT-227
Voltage rating (60 = 600 V)
Speed/type (U = Ultrafast)
8
-
None = Standard production
P = Lead (Pb)-free
Device code
5
1
3
2
4
6
7
8
G
A
200
S
A
60
U
P
3 (C)
2 (
G
)
1, 4 (E)
Lead a
ss
ignment
E
C
G
E
3
2
4
1
n-channel
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GA37931 | SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
| GA39931 | SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
| GA40931 | SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
| GA50TS120K | Short Circuit Rated Ultra-FastTM Speed IGBT |
| GAT-NT010 | dATP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GA200SA60UPBF | 制造商:Vishay Semiconductors 功能描述:IGBT SOT-227 TUBE 10 |
| GA200TD120U | 制造商:International Rectifier 功能描述: |
| GA200TS60U | 制造商:Vishay Angstrohm 功能描述:Trans IGBT Module N-CH 600V 265A 7-Pin INT-A-PAK |
| GA200TS60UPBF | 功能描述:IGBT 模塊 600 Volt 200 Amp RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| GA200TS60UX | 功能描述:IGBT 模塊 600 Volt 200 Amp RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。