- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385288 > GA200SA60UP (VISHAY SEMICONDUCTORS) TRANSISTOR 200 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor PDF資料下載
參數(shù)資料
| 型號： | GA200SA60UP |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 200 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors N-Ch 600 Volt 100A |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 149K |
| 代理商： | GA200SA60UP |
GA200SA60UP
Vishay Semiconductors
www.vishay.com
Revision: 26-Oct-11
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
4
Document Number: 94364
Fig. 6 - Maximum Effektive Transient Thermal Impedance, Junction to Case
Fig. 7 - Typical Capacitance vs.
Collector to Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Z
t
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
1
10
100
0
V
CE
- Collector to Emitter Voltage (V)
C
5000
10 000
15 000
20 000
25 000
30 000
V
GE
= 0 V, f = 1 MHz
C
ies
= C
ge
+ C
gc
, C
ce
shorted
C
res
= C
gc
C
oes
= C
ce
+ C
gc
C
ies
C
oes
C
res
0
200
400
600
800
0
4
8
12
16
20
Q
G
- Total Gate Charge (nC)
V
G
V
CC
= 400 V
I
C
= 110 A
0
10
20
30
40
50
60
R
G
- Gate Resistance (
Ω
)
T
0
10
20
30
40
50
60
V
CC
= 480 V
V
GE
= 15 V
T
J
= 25 °C
I
C
= 200 A
T
- 60 - 40 - 20
0
20
40
60
80 100 120 140 160
1
10
100
T
J
- Junction Temperature (°C)
I
C
= 200 A
I
C
= 100 A
I
C
= 350 A
R
G
= 2.0
Ω
V
GE
= 15 V
V
CC
= 480 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GA37931 | SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
| GA39931 | SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
| GA40931 | SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
| GA50TS120K | Short Circuit Rated Ultra-FastTM Speed IGBT |
| GAT-NT010 | dATP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GA200SA60UPBF | 制造商:Vishay Semiconductors 功能描述:IGBT SOT-227 TUBE 10 |
| GA200TD120U | 制造商:International Rectifier 功能描述: |
| GA200TS60U | 制造商:Vishay Angstrohm 功能描述:Trans IGBT Module N-CH 600V 265A 7-Pin INT-A-PAK |
| GA200TS60UPBF | 功能描述:IGBT 模塊 600 Volt 200 Amp RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| GA200TS60UX | 功能描述:IGBT 模塊 600 Volt 200 Amp RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。