參數(shù)資料
型號(hào)： GA200SA60UP
廠商： VISHAY SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： TRANSISTOR 200 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor
中文描述： IGBT Transistors N-Ch 600 Volt 100A
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 149K
代理商： GA200SA60UP
GA200SA60UP
Vishay Semiconductors
www.vishay.com
Revision: 26-Oct-11
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
2
Document Number: 94364
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Collector to emitter breakdown voltage
V
(BR)CES
TEST CONDITIONS
V
GE
= 0 V, I
C
= 250 μA
V
GE
= 0 V, I
C
= 1.0 A
Pulse width
80 μs; duty factor
0.1
MIN.
600
TYP.
-
MAX.
-
UNITS
V
Emitter to collector breakdown voltage
V
(BR)ECS
18
-
-
Temperature coeff. of breakdown
V
(BR)CES
/
T
J
V
GE
= 0 V, I
C
= 10 mA
I
C
= 100 A
I
C
= 200 A
I
C
= 100 A, T
J
= 150 °C
V
CE
= V
GE
, I
C
= 250 μA
V
CE
= V
GE
, I
C
= 2.0 mA
V
CE
= 100 V, I
C
= 100 A
Pulse width 5.0 μs, single shot
-
0.38
-
V/°C
Collector to emitter saturation voltage
V
CE(on)
V
GE
= 15 V
See fig. 2, 5
-
1.60
1.9
V
-
1.92
-
-
1.54
-
Gate threshold voltage
V
GE(th)
V
GE(th)
/
T
J
3.0
-
6.0
Temperature coeff. of threshold voltage
-
- 11
-
mV/°C
Forward transconductance
g
fe
79
-
-
S
Zero gate voltage collector current
I
CES
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C
V
GE
= ± 20 V
-
-
1.0
mA
-
-
10
Gate to emitter leakage current
I
GES
-
-
± 250
nA
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Total gate charge (turn-on)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
I
C
= 100 A
V
CC
= 400 V
V
GE
= 15 V; See fig. 8
-
770
1200
nC
Gate-emitter charge (turn-on)
-
100
150
Gate-collector charge (turn-on)
-
260
380
Turn-on delay time
T
J
= 25 °C
I
C
= 100 A
V
CC
= 480 V
V
GE
= 15 V
R
g
= 2.0
Energy losses include “tail”
See fig. 9, 10, 14
-
54
-
ns
Rise time
-
79
-
Turn-off delay time
-
130
200
Fall time
-
300
450
Turn-on switching loss
-
0.98
-
mJ
Turn-off switching loss
-
3.48
-
Total switching loss
-
4.46
7.6
Turn-on delay time
T
J
= 150 °C
I
C
= 100 A, V
CC
= 480 V
V
GE
= 15 V, R
g
= 2.0
Energy losses include “tail”
See fig. 10, 11, 14
-
56
-
ns
Rise time
-
75
-
Turn-off delay time
-
160
-
Fall time
-
460
-
Total switching loss
-
7.24
-
mJ
Internal emitter inductance
Measured 5 mm from package
-
5.0
-
nH
Input capacitance
V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz; See fig. 7
-
16 500
-
pF
Output capacitance
-
1000
-
Reverse transfer capacitance
-
200
-
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GA200SA60UPBF 制造商:Vishay Semiconductors 功能描述:IGBT SOT-227 TUBE 10
GA200TD120U 制造商:International Rectifier 功能描述:
GA200TS60U 制造商:Vishay Angstrohm 功能描述:Trans IGBT Module N-CH 600V 265A 7-Pin INT-A-PAK
GA200TS60UPBF 功能描述:IGBT 模塊 600 Volt 200 Amp RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
GA200TS60UX 功能描述:IGBT 模塊 600 Volt 200 Amp RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
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