參數(shù)資料
型號: FX6ASJ-03
廠商: Renesas Technology Corp.
英文描述: High-Speed Switching Use Pch Power MOS FET
中文描述: 高速開關(guān)使用溝道功率MOS FET
文件頁數(shù): 4/7頁
文件大?。?/td> 105K
代理商: FX6ASJ-03
FX6ASJ-03
Rev.1.00, Aug.20.2004, page 4 of 6
Transfer Characteristics (Typical)
Gate-Source Voltage V
GS
(V)
D
D
Forward Transfer Admittance vs.
Drain Current (Typical)
Drain Current I
D
(A)
Ff
–10
–1
–10
0
–2 –3
–5 –7
–2 –3
–5
–10
1
–7
10
0
2
3
5
7
10
1
2
3
5
7
V
DS
= –
5V
Pulse Test
0
2
4
6
8
–10
0
2
4
6
8
–10
Tc = 25°C
V
DS
= –10V
Pulse Test
Switching Characteristics (Typical)
Drain-Source Voltage V
DS
(V)
Capacitance vs.
Drain-Source Voltage (Typical)
Drain Current I
D
(A)
C
S
Gate-Source Voltage vs.
Gate Charge (Typical)
Gate Charge Qg (nC)
G
G
Source-Drain Diode Forward
Characteristics (Typical)
Source-Drain Voltage V
SD
(V)
S
S
–10
0
–3 –5–7
–2–3 –5–7
–10
1
–2–3
–2–3
–5–7
–10
2
10
3
10
4
2
3
5
7
10
2
2
3
5
7
2
3
5
7
Ciss
Coss
Crss
Tch = 25°C
f = 1MHz
V
GS
= 0V
–10
–1
–10
0
–10
1
–2 –3
–5 –7
–2 –3
–5 –7
10
1
2
3
5
7
10
2
2
3
5
7
10
0
td(off)
td(on)
tf
tr
Tch = 25°C
V
DD
= –15V
V
GS
= –10V
R
GEN
= R
GS
= 50
0
2
4
6
8
–10
0
4
8
12
16
20
Tch = 25°C
I
D
= –
6A
0
4
8
–12
–16
–20
0
0.4
0.8
–1.2
–1.6
–2.0
V
GS
= 0V
Pulse Test
75°C
125°C
Tc = 25°C
V
DS
= –10V
20V
25V
Tc = 125°C
75°C
25°C
相關(guān)PDF資料
PDF描述
FX6ASJ-06 ER 3C 3#16 PIN RECP LINE
FX6ASJ-06 Pch POWER MOSFET HIGH-SPEED SWITCHING USE
FX6ASJ-2 HIGH-SPEED SWITCHING USE
FX6ASJ-2 Pch POWER MOSFET HIGH-SPEED SWITCHING USE
FX6ASJ-3 HIGH-SPEED SWITCHING USE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FX6ASJ-03_06 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET
FX6ASJ-03-T13 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET
FX6ASJ06 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA
FX6ASJ-06 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET
FX6ASJ-06-T13 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET