參數(shù)資料
型號: FX6ASJ-03
廠商: Renesas Technology Corp.
英文描述: High-Speed Switching Use Pch Power MOS FET
中文描述: 高速開關(guān)使用溝道功率MOS FET
文件頁數(shù): 3/7頁
文件大?。?/td> 105K
代理商: FX6ASJ-03
FX6ASJ-03
Rev.1.00, Aug.20.2004, page 3 of 6
Performance Curves
Drain Power Dissipation Derating Curve
Case Temperature Tc (°C)
D
D
Maximum Safe Operating Area
Drain-Source Voltage V
DS
(V)
D
D
0
8
16
24
32
40
0
200
50
100
150
10
–1
10
0
–7
–2
–3
–5
–2
–3
–5
–7
10
2
–7
10
1
–2
–3
–5
10
0
–10
1
–10
2
–2–3 –5 –7
–2–3 –5 –7
–2–3 –5 –7
–2
tw = 10
μ
s
100
μ
s
1ms
10ms
DC
Tc = 25°C
Single Pulse
Output Characteristics (Typical)
D
D
Drain-Source Voltage V
DS
(V)
Output Characteristics (Typical)
D
D
Drain-Source Voltage V
DS
(V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
Gate-Source Voltage V
GS
(V)
D
D
On-State Resistance vs.
Drain Current (Typical)
Drain Current I
D
(A)
D
D
)
0
2
4
6
8
–10
–1.0
–2.0
–3.0
4.0
5.0
0
–1.0
2.0
3.0
4.0
5.0
0.4
0.8
–1.2
–1.6
–2.0
00
7V
P
D
= 20W
Tc = 25°C
Pulse Test
5V
3V
4V
6V
5V
3V
4V
Tc = 25°C
Pulse Test
8V
V
GS
= –10V
8V
V
GS
= –10V
7V
6V
0
–10
–1
–2
0.2
0.4
0.6
0.8
1.0
–10
0
–3 –5–7
–2
–10
1
–3 –5–7
–2
–10
2
–3 –5–7
V
GS
= –
4V
–10V
Tc = 25°C
Pulse Test
0
–1.0
2.0
3.0
4.0
5.0
0
2
4
6
8
–10
6A
3A
1A
I
D
= –10A
Tc = 25°C
Pulse Test
相關(guān)PDF資料
PDF描述
FX6ASJ-06 ER 3C 3#16 PIN RECP LINE
FX6ASJ-06 Pch POWER MOSFET HIGH-SPEED SWITCHING USE
FX6ASJ-2 HIGH-SPEED SWITCHING USE
FX6ASJ-2 Pch POWER MOSFET HIGH-SPEED SWITCHING USE
FX6ASJ-3 HIGH-SPEED SWITCHING USE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FX6ASJ-03_06 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET
FX6ASJ-03-T13 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET
FX6ASJ06 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA
FX6ASJ-06 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET
FX6ASJ-06-T13 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET