參數(shù)資料
型號: FX6ASJ-03
廠商: Renesas Technology Corp.
英文描述: High-Speed Switching Use Pch Power MOS FET
中文描述: 高速開關(guān)使用溝道功率MOS FET
文件頁數(shù): 2/7頁
文件大小: 105K
代理商: FX6ASJ-03
FX6ASJ-03
Rev.1.00, Aug.20.2004, page 2 of 6
Electrical Characteristics
(Tch = 25°C)
Parameter
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(th)
r
DS(ON)
r
DS(ON)
V
DS(ON)
| y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
SD
Rth(ch-c)
t
rr
Min.
–30
–1.3
Typ.
–1.8
0.23
0.46
– 0.69
2.6
550
165
45
9
14
32
14
–1.0
40
Max.
±
0.1
–0.1
–2.3
0.29
0.62
– 0.87
–1.5
6.25
Unit
V
μ
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°
C/W
ns
Test conditions
I
D
= –1 mA, V
GS
= 0 V
V
GS
=
±
20 V, V
DS
= 0 V
V
DS
= –30 V, V
GS
= 0 V
I
D
= –1 mA, V
DS
= –10 V
I
D
= –3 A, V
GS
= –10 V
I
D
= –1 A, V
GS
= – 4 V
I
D
= –3 A, V
GS
= –10 V
I
D
= –3 A, V
DS
= – 5 V
V
DS
= –10 V, V
GS
= 0 V,
f = 1MHz
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
V
DD
= –15 V, I
D
= –3 A,
V
GS
= –10 V,
R
GEN
= R
GS
= 50
I
S
= –3 A, V
GS
= 0 V
Channel to case
I
S
= –3 A, dis/dt = 50 A/
μ
s
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FX6ASJ-03_06 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET
FX6ASJ-03-T13 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET
FX6ASJ06 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA
FX6ASJ-06 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET
FX6ASJ-06-T13 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET