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參數資料
| 型號： | FPD5W1KX |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | Avalanche Photodiode |
| 中文描述： | 雪崩光電二極管 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 182K |
| 代理商： | FPD5W1KX |
Edition 1.1
July 2004
1
Avalanche Photodiode
FPD5W1KX
FEATURES
Data rates up to 2.5Gb/s
Operating temperature: -40°c to 85°C
Photosensitive diameter: 30μm
High cut-off frequency: 3.0GHz at M=5 and 10
Large gain-bandwidth product: 40GHz
Low dark current: 20nA
Low multipled dark current: 3nA
Low excess noise factor: 5 at M=10
APPLICATIONS
2.4 Gb/s optical transmission systems
DESCRIPTION
The FPD5W1KX is a wide bandwidth, high sensitivity avalanche photodiode (APD)
optimized for operation at 1550nm.This APD is designed for use in optical transmission
systems operating at a giga-bit-rate, above 2.4Gb/s, and for long transmission distances.
The APD chip has a photosensitive area diameter of 30μm. Fujitsu’s advanced InP
material technology realizes a high reliability planar structure device with wide bandwidth
(large gain-bandwidth product) as well as low noise characteristics. A single-mode fiber is
aligned to a hermetically sealed APD through a highly stable optical coupling system.
Parameter
Symbol
Ratings
Unit
ABSOLUTE MAXIMUM RATINGS (Ta=25
°
C, unless otherwise specified)
Min.
Max.
Storage Temperature
Tstg
°
C
+85
-40
Operating Temperature
°
C
Top
+85
-40
APD Forward Current
mA
IF
10
-
APD Reverse Voltage
V
VR
VB
-
APD Reverse Current
mA
I
R
3(peak)
0
Note: Since VB may vary from device-to-device, VB data is attached to each device for reference.
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