參數(shù)資料
型號(hào)： FP75R12KE3
廠商： INFINEON TECHNOLOGIES AG
元件分類： IGBT 晶體管
英文描述： Elektrische Eigenschaften / Electrical properties
中文描述： 105 A, 1200 V, N-CHANNEL IGBT
封裝： MODULE-35
文件頁數(shù)： 3/11頁
文件大小： 162K
代理商： FP75R12KE3
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP75R12KE3
Vorlufige Daten
Preliminary data
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
min.
typ.
max.
Modulinduktivitt
stray inductance module
L
σ
CE
-
-
100
nH
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
T
C
= 25°C
R
CC'+EE'
-
7
-
m
Diode Wechselrichter/ Diode Inverter
Durchlaspannung
forward voltage
min.
-
-
typ.
1,65
1,65
max.
2,2
-
V
GE
= 0V, T
vj
= 25°C, I
F
=
V
GE
= 0V, T
vj
= 125°C, I
F
=
I
F
=I
Nenn
, - di
F
/dt =
V
GE
= -10V, T
vj
= 25°C, V
R
=
V
GE
= -10V, T
vj
= 125°C, V
R
=
I
F
=I
Nenn
, - di
F
/dt =
V
GE
= -10V, T
vj
= 25°C, V
R
=
V
GE
= -10V, T
vj
= 125°C, V
R
=
I
F
=I
Nenn
, - di
F
/dt =
V
GE
= -10V, T
vj
= 25°C, V
R
=
V
GE
= -10V, T
vj
= 125°C, V
R
=
75 A
75 A
2000 A/μs
600 V
600 V
2000 A/μs
600 V
600 V
2000 A/μs
600 V
600 V
V
F
V
V
Rückstromspitze
peak reverse recovery current
I
RM
-
-
80
86
-
-
A
A
Sperrverzgerungsladung
recovered charge
Q
r
-
-
9,3
16,3
-
-
μAs
μAs
Abschaltenergie pro Puls
reverse recovery energy
E
RQ
-
-
3,2
6,5
typ.
1,8
2,1
-
-
mWs
mWs
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
min.
-
-
max.
2,3
-
V
GE
= 15V, T
vj
= 25°C, I
C
=
V
GE
= 15V, T
vj
= 125°C, I
C
=
40 A
40 A
V
CE sat
V
V
Gate-Schwellenspannung
gate threshold voltage
V
CE
= V
GE
, T
vj
= 25°C, I
C
=
1,5 mA
V
GE(TO)
5,0
5,8
6,5
V
Eingangskapazitt
input capacitance
f = 1MHz, T
vj
= 25°C
V
CE
= 25 V, V
GE
= 0 V
C
ies
-
2,5
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut off current
Gate-Emitter Reststrom
gate-emitter leakage current
V
GE
= 0V, T
vj
= 25°C, V
CE
=
1200 V
I
CES
-
5,0
-
mA
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
I
GES
-
-
400
nA
Schaltverluste und -bedingungen
Switching losses and conditions
Diode Brems-Chopper/ Diode Brake-Chopper
Durchlaspannung
forward voltage
min.
-
-
typ.
2,35
2,55
max.
2,8
-
T
vj
= 25°C, I
F
=
T
vj
= 125°C, I
F
=
siehe Wechselrichter in Dbl FP25R12KE3
see inverter in datasheet FP25R12KE3
40 A
40 A
V
F
V
V
Schaltverluste und -bedingungen
Switching losses and conditions
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand
rated resistance
min.
typ.
max.
T
C
= 25°C
R
25
-
5
-
k
Abweichung von R
100
deviation of R
100
T
C
= 100°C, R
100
= 493
R/R
-5
5
%
Verlustleistung
power dissipation
T
C
= 25°C
P
25
20
mW
B-Wert
B-value
R
2
= R
1
exp [B(1/T
2
- 1/T
1
)]
B
25/50
3375
K
siehe Wechselrichter in Dbl FP40R12KE3
see inverter in datasheet FP40R12KE3
3(11)
DB-PIM-IGBT3_1.xls
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FP75R12KE3V1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Module
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