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參數(shù)資料
| 型號： | FII50-12E |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPT IGBT phaseleg |
| 中文描述： | 50 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ISOPLUS, I4PAC-5 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 79K |
| 代理商： | FII50-12E |
1 - 4
2003 IXYS All rights reserved
FII 50-12E
Features
NPT
3
IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
HiPerFRED
TM
diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
ISOPLUS i4-PAC
TM
package
- isolated back surface
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873
Applications
single phaseleg
- buck-boost chopper
H bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
three phase bridge
- AC drives
- controlled rectifier
I
C25
V
CES
V
CE(sat) typ.
= 2.0 V
= 50 A
= 1200 V
NPT
3
IGBT phaseleg
in ISOPLUS i4-PAC
TM
1
5
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
3
5
4
1
2
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C
1200
V
V
GES
±
20
V
I
C25
I
C90
T
C
= 25°C
T
C
= 90°C
50
32
A
A
I
CM
V
CEK
V
=
±
15 V; R
= 39
; T
= 125°C
RBSOA, Clamped inductive load; L = 100 μH
50
V
CES
A
t
(SCSOA)
V
= 900V; V
GE
=
±
15 V; R
G
= 39
; T
VJ
= 125°C
non-repetitive
10
μs
P
tot
T
C
= 25°C
200
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 30 A; V
GE
= 15 V; T
VJ
= 25°C
2.0
2.3
2.6
V
V
T
VJ
= 125°C
V
GE(th)
I
C
= 1 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
0.4
mA
mA
0.4
I
GES
V
CE
= 0 V; V
GE
=
±
20 V
200
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
85
50
440
50
4.6
2.2
ns
ns
ns
ns
mJ
mJ
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 30 A
2
nF
nC
250
R
thJC
R
thJH
0.6 K/W
with heatsink compound
1.2
K/W
Inductive load, T
= 125°C
V
CE
= 600 V; I
C
= 30 A
V
GE
= ±15 V; R
G
= 39
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