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參數(shù)資料
| 型號(hào)： | FID35-06C |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Fast IGBT Chopper in ISOPLUS i4-PACTM |
| 中文描述： | 38 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOPLUS, I4PAC-5 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 48K |
| 代理商： | FID35-06C |
1 - 2
2004 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
FID 35-06C
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
Features
●
NPT IGBT technology
- low switching losses for high
frequency operation
- no latch up
- positive temperature coefficient for
easy paralleling
●
HiPerDyn
TM
FRED
- consisting of series connected
diodes
- enhanced dynamic behaviour for
high frequency operation
●
ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered E 72873
Applications
●
boost chopper for power factor
correction
●
supply of high frequency transformer
- switched mode power supplies
- welding converters
IGBT
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C
600
V
V
GES
±
20
V
I
C25
I
C90
T
C
= 25°C
T
C
= 90°C
38
24
A
A
I
CM
V
CEK
V
=
±
15 V; R
= 10
; T
= 125°C
RBSOA, Clamped inductive load; L = 100 μH
110
V
CES
A
t
(SCSOA)
V
= V
; V
GE
=
±
15 V; R
G
= 10
; T
VJ
= 125°C
non-repetitive
10
μs
P
tot
T
C
= 25°C
125
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 25 A; V
GE
= 15 V; T
VJ
= 25°C
1.9
2.2
2.4
V
V
T
VJ
= 125°C
V
GE(th)
I
C
= 0.7 mA; V
GE
= V
CE
3
5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
0.04
mA
mA
1
I
GES
V
CE
= 0 V; V
GE
=
±
20 V
200
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
30
50
320
70
1.1
0.6
ns
ns
ns
ns
mJ
mJ
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600V; V
GE
= 15 V; I
C
= 15 A
1.6
140
nF
nC
R
thJC
R
thJH
1.0 K/W
K/W
(with heat transfer paste)
2.0
Inductive load, T
= 125°C
V
CE
= 300 V; I
C
= 25 A
V
GE
= ±15 V; R
G
= 10
I
C25
V
CES
V
CE(sat) typ.
= 1.9 V
= 38 A
= 600 V
Fast IGBT Chopper
in ISOPLUS i4-PAC
TM
1
5
3
4
1
2
Preliminary data
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