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參數(shù)資料
| 型號(hào)： | FID36-06D |
| 廠商： | IXYS CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | IGBT Chopper in ISOPLUS i4-PACTM |
| 中文描述： | 38 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOPLUS I4PAC-5 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | FID36-06D |
2004 IXYS All rights reserved
1 - 2
4
IXYS reserves the right to change limits, test conditions and dimensions.
FID 36-06D
Features
NPT IGBT
- low saturation voltage with positive
temperature coefficient
- low switching losses
- wide safe operating area
HiPerFRED
TM
diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered E 72873
Applications
medium frequency power supplies
- boost chopper for power factor
correction
- transformer primary switch
drives: supply of
- switched reluctance machines
- armature or excitation winding of
DC machines
- excitation winding of synchronous
machines
I
C25
V
CES
V
CE(sat) typ.
= 1.9 V
= 38 A
= 600 V
IGBT Chopper
in ISOPLUS i4-PAC
TM
IGBT
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C
600
V
V
GES
±
20
V
I
C25
I
C90
T
C
= 25°C
T
C
= 90°C
38
24
A
A
I
CM
V
CEK
V
=
±
15 V; R
= 10
; T
= 125°C
RBSOA, Clamped inductive load; L = 100 μH
110
V
CES
A
t
(SCSOA)
V
= V
; V
GE
=
±
15 V; R
G
= 10
; T
VJ
= 125°C
non-repetitive
10
μs
P
tot
T
C
= 25°C
125
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 25 A; V
GE
= 15 V; T
VJ
= 25°C
1.9
2.2
2.4
V
V
T
VJ
= 125°C
V
GE(th)
I
C
= 0.7 mA; V
GE
= V
CE
3
5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
0.04
mA
mA
0.04
I
GES
V
CE
= 0 V; V
GE
=
±
20 V
200
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
30
50
320
70
1.1
0.6
ns
ns
ns
ns
mJ
mJ
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 300V; V
GE
= 15 V; I
C
= 15 A
1.6
140
nF
nC
R
thJC
R
thJH
1.0 K/W
with heatsink compound
2.0
K/W
Inductive load, T
= 125°C
V
CE
= 300 V; I
C
= 25 A
V
GE
= ±15 V; R
G
= 10
1
5
3
4
1
2
Preliminary data
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