參數(shù)資料
型號(hào): FHX35LG
廠商: FUJITSU LTD
元件分類: 小信號(hào)晶體管
英文描述: Low Noise HEMT
中文描述: KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝: HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 155K
代理商: FHX35LG
3
FHX35X/002
FHX35LG/002
Low Noise HEMT
FHX35X/002
BONDING PROCEDURE FOR FET CHIPs
Caution must be excercised to prevent static build up by proper grounding of all equipment and per-
sonnel. All operations must be performed in a clean, dust-free and dry environment.
1. Storage Condition: Store in a clean, dry nitrogen environment.
2. Die-Attach
2.1 The die-attach station must have an accurate temperature control, and an inert
forming gas should be used.
2.2 Chips should be kept at room temperature, except during die-attach.
2.3 Place package or carrier on the heated stage.
2.4 Place the solder at the position where the chip will be bonded.
2.5 Lightly grasp the chip edges using tweezers and scrub the die onto the Au-Sn
solder preform. The die attach conditions are: 300 to 310
°
for 30 to 60 seconds. The Au-Sn
(80-20) solder preform volume should be about 3.2x10-3mm3for FHX35X/002.
3. Wire Bonding
3.1 Bonding Condition
The bonder must be properly grounded. Wire bonding should be performed with a
thermal compression bonder using 0.7 to 1.0 mil diameter, half hard, 3-8%
elongation gold wire.
3.2 Wire Layout
The wire bonding should be performed as shown in the following example.
Wire Layout
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FHX35LG/002 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:Low Noise HEMT
FHX35X 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs HEMTs, Chip, Low Noise Amp, DBS LNB, 1.2dB, 12GHz, Waffle5
FHX35X/002 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:Low Noise HEMT
FHX45X 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs HEMTs, Chip, Low Noise Amp, DBS LNB, 0.55dB,12GHz, Waffle5 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs HEMTs, Chip, Low Noise Amp, DBS LNB, 0.55dB,12GHz, Waffle4
FHX76LP 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs HEMTs, BS/CS LNA, 0.4dB, 12GHz, Bulk