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參數(shù)資料
| 型號(hào)： | FHX06LG |
| 廠商： | FUJITSU LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Super Low Noise HEMT |
| 中文描述： | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 123K |
| 代理商： | FHX06LG |
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Noise Figure
Associated Gain
Noise Figure
Associated Gain
Thermal Resistance
Symbol
IDSS
gm
Vp
VGSO
NF
Gas
NF
Gas
NF
Gas
Rth
15
35
-0.2
-3.0
-
9.5
-
9.5
-
9.5
-
30
45
-0.7
-
0.75
10.5
0.9
10.5
1.1
10.5
300
60
-
-1.5
-
0.85
-
1.1
-
1.35
-
400
VDS = 2V, VGS = 0V
VDS = 2V, IDS =10mA
VDS = 2V, IDS =1mA
IGS = -10
μ
A
VDS = 2V,
IDS = 10mA,
f = 12GHz
mA
mS
V
V
dB
dB
dB
FHX04LG
FHX05LG
FHX06LG
dB
dB
dB
Condition
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Note:
RF parameters are measured on a sample basis as follows:
Lot qty.
1200
or
less
1201
to
3200
3201
to
10000
10001 or
over
Sample qty.
125
200
315
500
Accept/Reject
(0,1)
(0,1)
(1,2)
(1,2)
AVAILABLE CASE STYLES:
LG
Channel to Case
°
C/W
1
Edition 1.1
July 1999
Item
Symbol
Unit
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
Pt*
Tstg
Tch
V
V
3.5
-3.0
180
mW
°
C
°
C
-65 to +175
175
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
*Note:
Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with
gate resistance of 4000
.
3. The operating channel temperature (Tch) should not exceed 80
°
C.
FEATURES
Low Noise Figure: 0.75dB (Typ.)@f=12GHz (FHX04)
High Associated Gain: 10.5dB (Typ.)@f=12GHz
Lg
≤
0.25μm, Wg = 200μm
Gold Gate Metallization for High Reliability
Cost Effective Ceramic Microstrip (SMT) Package
Tape and Reel Packaging Available
FHX04LG, 05LG, 06LG
Super Low Noise HEMT
DESCRIPTION
The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor(HEMT)
intended for general purpose, low noise and high gain amplifiers in the 2-18GHz
frequency range.The devices are packaged in cost effective, low parasitic, hermetically
sealed metal-ceramic package for high volume telecommunication, TVRO, VSAT or other
low noise applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FHX06X | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:GaAs FET & HEMT Chips |
| FHX13LG | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs HEMTs, BS/CS LNA, 0.45dB, 12GHz, Bulk |
| FHX13X | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:GaAs FET & HEMT Chips |
| FHX14LG | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs HEMTs, BS/CS LNA, 0.55dB, 12GHz, Bulk |
| FHX14X | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:GaAs FET & HEMT Chips |
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