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參數(shù)資料
| 型號： | FGS15N40L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Electrical Characteristics of IGBT |
| 中文描述： | 400 V, N-CHANNEL IGBT |
| 封裝： | SOP-8 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 204K |
| 代理商： | FGS15N40L |
2001 Fairchild Semiconductor Corporation
September 2001
FGS15N40L Rev. A1
IGBT
F
FGS15N40L
General Description
Insulated Gate Bipolar Transistors(IGBTs) with trench
gate structure have superior performance in conductance
and switching to planar gate structure and also have wide
noise immunity. These devices are well suitable for
strobe application
Features
High Input Impedance
High Peak Current Capability (130A)
Easy Gate Drive
Absolute Maximum Ratings
T
C
= 25
°
C unless otherrwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Notes: Mounted on 1” square PCB(FR4 or G-10 Material)
Symbol
V
CES
V
GES
I
CM (1)
P
C
T
J
T
stg
Description
FGS15N40L
400
±
6
130
2.0
-40 to +150
-40 to +150
Units
V
V
A
W
°
C
°
C
Collector-Emitter Voltage
Gate-Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
PurPoses from case for 5 secnds
@ T
a
= 25
°
C
T
L
300
°
C
Symbol
R
θ
JA
Parameter
Typ.
--
Max.
62.5
Units
°
C
/
W
Thermal Resistance, Junction-to-Ambient(PCB Mount)
Application
Strobe Flash
G
C
E
EE
EG
C
C C
C
8-SOP
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| FGS15N40LTF | 功能描述:IGBT 晶體管 N-Ch/400V/130A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGS15N40LTU | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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