參數(shù)資料
型號(hào)： FGP30N6S2
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： 600V, SMPS II Series N-Channel IGBT
中文描述： 45 A, 600 V, N-CHANNEL IGBT, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁(yè)數(shù)： 4/8頁(yè)
文件大?。?/td> 177K
代理商： FGP30N6S2
2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
F
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
Typical Performance Curves
(Continued)
E
O
,
μ
J
200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
250
0
5
10
15
20
25
0
350
300
50
400
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
150
R
G
= 10
, L = 500
μ
H, V
CE
= 390V
E
O
μ
J
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
300
0
600
5
10
15
20
25
0
500
400
200
R
G
= 10
, L = 500
μ
H, V
CE
= 390V
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
0
6
8
12
14
5
10
15
20
25
0
16
4
2
10
R
G
= 10
, L = 500
μ
H, V
CE
= 390V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
0
20
10
40
35
25
5
10
15
20
25
0
30
15
T
J
= 25
o
C, V
GE
= 10V, V
GE
=15V
T
J
= 125
o
C, V
GE
= 15V, V
GE
= 10V
R
G
= 10
, L = 500
μ
H, V
CE
= 390V
5
20
30
40
50
60
70
80
90
0
5
10
15
20
25
t
d
)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
R
G
= 10
, L = 500
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
40
60
80
100
10
5
15
20
25
0
120
R
G
= 10
, L = 500
μ
H, V
CE
= 390V
T
J
= 125
o
C, V
GE
= 10V OR 15V
T
J
= 25
o
C, V
GE
= 10V OR 15V
相關(guān)PDF資料
PDF描述
FGB30N6S2 600V, SMPS II Series N-Channel IGBT
FGH40N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGH40N6S2 600V, SMPS II Series N-Channel IGBT
FGP40N6S2 Switch Mode Power Supply; Output Power:240W; No. of Outputs:1; Output 1 VDC +:24VDC; Output Current 1:10A; Power Supply Mounting:Chassis; Leaded Process Compatible:Yes; Output Current:10A; Output Power Max:240W; Output Voltage:24VDC RoHS Compliant: Yes
FGB40N6S2 Switch Mode Power Supply; Output Power:240W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:5A; Power Supply Mounting:Chassis; Output Current:5A; Output Power Max:240W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FGP30N6S2D 功能描述:IGBT 晶體管 Comp 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGP-3401-0501-2-0FF 制造商:YAMAICHI 制造商全稱:Yamaichi Electronics Co., Ltd. 功能描述:PC Board Transition Header (2 Rows)
FGP-4001-0501-2-0FF 制造商:YAMAICHI 制造商全稱:Yamaichi Electronics Co., Ltd. 功能描述:PC Board Transition Header (2 Rows)
FGP40N6S2 功能描述:IGBT 晶體管 Sgl 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGP4ON6S2 制造商:Fairchild Semiconductor Corporation 功能描述:
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