參數(shù)資料
型號(hào)： FGP30N6S2
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： 600V, SMPS II Series N-Channel IGBT
中文描述： 45 A, 600 V, N-CHANNEL IGBT, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 177K
代理商： FGP30N6S2
2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
F
Typical Performance Curves
Figure 1. DC Collector Current vs Case
Temperature
Figure 2. Minimum Switching Safe Operating Area
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
10
0
20
25
75
100
125
150
40
30
50
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
0
I
C
,
300
400
200
100
500
600
0
40
60
20
70
50
30
10
T
J
= 150
o
C, R
G
= 10
, V
GE
= 15V, L = 100
μ
H
f
M
,
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
30
10
20
1000
100
T
C
75
o
C
T
J
= 125
o
C, R
G
= 3
, L = 200
μ
H, V
CE
= 390V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.49
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
V
GE
= 10V
V
GE
= 15V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
100
150
200
250
300
350
9
10
11
12
13
14
15
16
2
4
6
8
10
12
V
CE
= 390V, R
G
= 10
, T
J
= 125
o
C
I
SC
t
SC
0.50
1.00
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
2
6
1.50
2.25
14
8
18
16
1.25
4
10
12
1.75
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 10V
T
J
= 125
o
C
T
J
= 150
o
C
0.75
2.00
T
J
= 25
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
18
.5
1
1.50
2.0
2.25
.75
1.75
1.25
2
6
14
8
16
4
10
12
T
J
= 125
o
C
T
J
= 25
o
C
DUTY CYCLE < 0.5%, V
GE
=15V
PULSE DURATION = 250
μ
s
T
J
= 150
o
C
相關(guān)PDF資料
PDF描述
FGB30N6S2 600V, SMPS II Series N-Channel IGBT
FGH40N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGH40N6S2 600V, SMPS II Series N-Channel IGBT
FGP40N6S2 Switch Mode Power Supply; Output Power:240W; No. of Outputs:1; Output 1 VDC +:24VDC; Output Current 1:10A; Power Supply Mounting:Chassis; Leaded Process Compatible:Yes; Output Current:10A; Output Power Max:240W; Output Voltage:24VDC RoHS Compliant: Yes
FGB40N6S2 Switch Mode Power Supply; Output Power:240W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:5A; Power Supply Mounting:Chassis; Output Current:5A; Output Power Max:240W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FGP30N6S2D 功能描述:IGBT 晶體管 Comp 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGP-3401-0501-2-0FF 制造商:YAMAICHI 制造商全稱:Yamaichi Electronics Co., Ltd. 功能描述:PC Board Transition Header (2 Rows)
FGP-4001-0501-2-0FF 制造商:YAMAICHI 制造商全稱:Yamaichi Electronics Co., Ltd. 功能描述:PC Board Transition Header (2 Rows)
FGP40N6S2 功能描述:IGBT 晶體管 Sgl 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGP4ON6S2 制造商:Fairchild Semiconductor Corporation 功能描述:
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