參數(shù)資料
型號： FGH20N6S2D
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
中文描述： 28 A, 600 V, N-CHANNEL IGBT, TO-247
封裝： TO-247, 3 PIN
文件頁數(shù)： 6/9頁
文件大小： 232K
代理商： FGH20N6S2D
2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
F
Figure 19. Diode Forward Current vs Forward
Voltage Drop
Figure 20. Recovery Times vs Forward Current
Figure 21. Recovery Times vs Rate of Change of
Current
Figure 22. Stored Charge vs Rate of Change of
Current
Figure 23. Reverse Recovery Softness Factor vs
Rate of Change of Current
Figure 24. Maximum Reverse Recovery Current vs
Rate of Change of Current
Typical Performance Curves
(Continued)
0.5
1.0
1.5
2.5
I
E
,
V
EC
, FORWARD VOLTAGE (V)
0
2.0
0
2
25
o
C
125
o
C
14
8
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%,
3.0
4
6
12
10
200
100
0
t
r
,
I
EC
, FORWARD CURRENT (A)
0
14
4
2
125
o
C t
a
125
o
C t
b
, t
rr
12
8
10
6
dI
EC
/dt = 200A/
μ
s, V
CE
= 390V
50
150
250
25
o
C t
b
, t
rr
25
o
t
a
25
o
C t
b
I
EC
= 7A, V
CE
= 390V
t
a
,
b
,
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
40
0
60
80
100
160
20
1000
200
300
600
400
500
125
o
C t
b
125
o
C t
a
25
o
C t
a
140
120
700
800
900
250
200
150
100
Q
r
,
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
300
500
125
o
C, I
EC
= 7A
125
o
C, I
EC
= 3.5A
25
o
C, I
EC
= 3.5A
25
o
C, I
EC
= 7A
V
CE
= 390V
350
1000
200
300
600
400
500
700
800
900
450
400
dI
EC
/dt, CURRENT RATE OF CHANGE (A/
μ
s)
3.0
5.0
4.5
6.0
5.5
I
EC
= 3.5A
S
4.0
3.5
1000
200
300
600
400
500
700
800
900
I
EC
= 7A
V
CE
= 390V, T
J
= 125
°
C
dI
EC
/dt, CURRENT RATE OF CHANGE (A/
μ
s)
3
5
4
10
6
I
EC
= 7A
I
EC
= 3.5A
I
7
V
CE
= 390V, T
J
= 125
°
C
9
8
1000
200
300
600
400
500
700
800
900
相關(guān)PDF資料
PDF描述
FGB20N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGP20N6S2D Switch Mode Power Supply; Output Power:300W; No. of Outputs:1; Output 1 VDC +:5VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:300W; Output Voltage:5VDC; Series:JWS RoHS Compliant: Yes
FGB20N6S2DT 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGH20N6S2 Switch Mode Power Supply; Output Power:120W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:2.5A; Power Supply Mounting:Chassis; Output Current:2.5A; Output Power Max:120W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes
FGP20N6S2 600V, SMPS II Series N-Channel IGBT
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FGH30N60LSD 功能描述:IGBT 晶體管 1.1V 30A High Speed RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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