參數(shù)資料
型號： FGP20N6S2D
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： Switch Mode Power Supply; Output Power:300W; No. of Outputs:1; Output 1 VDC +:5VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:300W; Output Voltage:5VDC; Series:JWS RoHS Compliant: Yes
中文描述： 28 A, 600 V, N-CHANNEL IGBT, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁數(shù)： 1/9頁
文件大?。?/td> 232K
代理商： FGP20N6S2D
2002 Fairchild Semiconductor Corporation
July 2002
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
F
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth
TM
Diode
General Description
The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge, plateau voltage and high
avalanche capability (UIS). These LGC devices shorten
delay times, and reduce the power requirement of the gate
drive. These devices are ideally suited for high voltage
switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially
designed for:
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
IGBT (co-pack) formerly Developmental Type TA49332
(Diode formerly Developmental Type TA49469)
Package
Features
100kHz Operation at 390V, 7A
200kHZ Operation at 390V, 5A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . .85ns at TJ = 125
o
C
Low Gate Charge . . . . . . . . . 30nC at V
GE
= 15V
Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
Low Conduction Loss
Low E
on
Soft Recovery Diode
Device Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
BV
CES
I
C25
I
C110
I
CM
V
GES
V
GEM
SSOA
E
AS
P
D
Parameter
Ratings
600
28
13
40
±20
±30
35A at 600V
100
125
1.0
-55 to 150
-55 to 150
Units
V
A
A
A
V
V
A
mJ
W
W/°C
°C
°C
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T
C
= 25°C
Collector Current Continuous, T
C
= 110°C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at T
J
= 150°C, Figure 2
Pulsed Avalanche Energy, I
CE
= 7.0A, L = 4mH, V
DD
= 50V
Power Dissipation Total T
C
= 25°C
Power Dissipation Derating T
C
> 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
T
J
T
STG
TO-263AB
TO-220AB
E
C
G
E
G
TO-247
E
C
G
Symbol
COLLECTOR (FLANGE)
C
E
G
相關(guān)PDF資料
PDF描述
FGB20N6S2DT 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGH20N6S2 Switch Mode Power Supply; Output Power:120W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:2.5A; Power Supply Mounting:Chassis; Output Current:2.5A; Output Power Max:120W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes
FGP20N6S2 600V, SMPS II Series N-Channel IGBT
FGB20N6S2 600V, SMPS II Series N-Channel IGBT
FGH30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
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