| 型號(hào): | FGH20N6S2D | 
| 廠商: | FAIRCHILD SEMICONDUCTOR CORP | 
| 元件分類: | IGBT 晶體管 | 
| 英文描述: | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode | 
| 中文描述: | 28 A, 600 V, N-CHANNEL IGBT, TO-247 | 
| 封裝: | TO-247, 3 PIN | 
| 文件頁(yè)數(shù): | 3/9頁(yè) | 
| 文件大小: | 232K | 
| 代理商: | FGH20N6S2D | 

| 相關(guān)PDF資料 | PDF描述 | 
|---|---|
| FGB20N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode | 
| FGP20N6S2D | Switch Mode Power Supply; Output Power:300W; No. of Outputs:1; Output 1 VDC +:5VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:300W; Output Voltage:5VDC; Series:JWS RoHS Compliant: Yes | 
| FGB20N6S2DT | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode | 
| FGH20N6S2 | Switch Mode Power Supply; Output Power:120W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:2.5A; Power Supply Mounting:Chassis; Output Current:2.5A; Output Power Max:120W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes | 
| FGP20N6S2 | 600V, SMPS II Series N-Channel IGBT | 
| 相關(guān)代理商/技術(shù)參數(shù) | 參數(shù)描述 | 
|---|---|
| FGH25N120FTDS | 功能描述:IGBT 晶體管 1200V 25A Field Stop Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube | 
| FGH25T120SMD_F155 | 制造商:Fairchild Semiconductor Corporation 功能描述:1200V 25A FS2 TRENCH IGBT - Rail/Tube 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 1200V 25A FS2 TO-247-3 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 1200V 50A 428W TO247-3 制造商:Fairchild Semiconductor Corporation 功能描述:RAIL / 1200V 25A FS2 Trench IGBT | 
| FGH30N120FTD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Field stop trench technology | 
| FGH30N120FTDTU | 功能描述:IGBT 晶體管 N-CH/1200V 30A FS Trench RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube | 
| FGH30N60LSD | 功能描述:IGBT 晶體管 1.1V 30A High Speed RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |