參數(shù)資料
型號： FF4R12K4
英文描述： IGBT Module
中文描述： IGBT模塊
文件頁數(shù)： 2/4頁
文件大小： 184K
代理商： FF4R12K4
FF 400 R 12 KF 4
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
Kollektor-Dauergleichstrom
Periodischer Kollektor Spitzenstrom
Gesamt-Verlustleistung
Gate-Emitter-Spitzenspannung
Dauergleichstrom
Periodischer Spitzenstrom
Isolations-Prüfspannung
collector-emitter voltage
DC-collector current
repetitive peak collctor current
total power dissipation
gate-emitter peak voltage
DC forward current
repetitive peak forw. current
insulation test voltage
V
CES
I
C
I
CRM
P
tot
V
GE
I
F
I
FRM
V
ISOL
1200 V
400 A
800 A
2700 W
± 20 V
400 A
800 A
2,5 kV
t
p
=1 ms
t
C
=25°C, Transistor /transistor
t
p
=1ms
RMS, f=50 Hz, t= 1 min.
Charakteristische Werte / Characteristic values: Transistor
Kollektor-Emitter Sttigungsspannung
min.
typ.
2,7
3,3
5,5
28
max.
3,2 V
3,9 V
6,5 V
collector-emitter saturation voltage
i
C
=400A, v
GE
=15V, t
vj
=25°C
i
C
=400A, v
GE
=15V, t
vj
=125°C
i
C
=16mA, v
CE
=v
GE
, t
vj
=25°C
f
O
=1MHz,t
vj
=25°C,v
CE
=25V, v
GE
=0V
v
CE
=1200V, v
GE
=0V, t
vj
=25°C
v
CE
=1200V, v
GE
=0V, t
vj
=125°C
v
CE
=0V, v
GE
=20V, t
vj
=25°C
v
CE
=0V, v
EG
=20V, t
vj
=25°C
i
C
=400A,v
CE
=600V,v
L
=±15V,R
G
=3,6 ,t
vj
= 25°C
i
C
=400A,v
CE
=600V,v
L
=±15V,R
G
=3,6 ,t
vj
=125°C
i
C
=400A,v
CE
=600V,v
L
=±15V,R
G
=3,6 ,t
vj
= 25°C
i
C
=400A,v
CE
=600V,v
L
=±15V,R
G
=3,6 ,t
vj
=125°C
i
C
=400A,v
CE
=600V,v
L
=±15V,R
G
=3,6 ,t
vj
= 25°C
i
C
=400A,v
CE
=600V,v
L
=±15V,R
G
=3,6 ,t
vj
=125°C
i
C
=400A, v
CE
=600V, L
s
=70nH
v
L
=±15V, R
G
=3,6 , t
vj
=125°C
i
C
=400A, v
CE
=600V, L
s
=70nH
v
L
=±15V, R
G
=3,6 , t
vj
=125°C
v
CE sat
-
-
Gate-Schwellenspannung
Eingangskapazitt
Kollektor-Emitter Reststrom
gate threshold voltage
input capacity
collector-emitter cut-off current
v
GE(th)
C
ies
i
CES
4,5
-
-
-
-
-
-
-
-
-
-
-
- nF
- mA
- mA
8
32
Gate-Emitter Reststrom
Emitter-Gate Reststrom
Einschaltzeit (induktive Last)
gate leakage current
gate leakage current
turn-on time (inductive load)
i
GES
i
EGS
t
on
-
-
400 nA
400 nA
- μs
- μs
- μs
- μs
- μs
- μs
0,7
0,8
0,9
1,0
0,10
0,15
Speicherzeit (induktive Last)
storage time (inductive load)
t
s
Fallzeit (induktive Last)
fall time (inductive load)
t
f
Einschaltverlustenergie pro puls
turn-on energie per pulse
E
on
-
70
- mWs
Abschaltverlustenergie pro Puls
turn-off energie loss per pulse
E
off
-
60
- mWs
Charakteristische Werte / Characteristic values
Inversdiode / Inverse diode
Durchlaspannung
forward voltage
i
F
=400A, v
GE
=0V, t
vj
=25°C
i
F
=400A, v
GE
=0V, t
vj
=125°C
i
F
=400A, v
RM
=600V, v
EG
= 10V
-di
F
/dt = 2,0 kA/μs, t
vj
= 25°C
-di
F
/dt = 2,0 kA/μs, t
vj
= 125°C
i
F
=400A, v
RM
=600V, v
EG
= 10V
-di
F
/dt = 3,0 kA/μs, t
vj
= 25°C
-di
F
/dt = 3,0 kA/μs, t
vj
= 125°C
v
F
-
-
2,2
2,0
2,7 V
2,5 V
Rückstromspitze
peak reverse recovery current
I
RM
-
-
140
240
- A
- A
Sperrverzgerungsladung
recovered charge
Q
r
-
-
18
50
- μAs
- μAs
Thermische Eigenschaften / Thermal properties
Innerer Wrmewiderstand
thermal resistance, junction to case
Transistor / transistor, DC
Transistor,DC,pro Zweig/per arm
Diode, DC, pro Modul/per module
Diode, DC, pro Zweig/per arm
pro Modul / per Module
pro Zweig / per arm
pro Modul / per Module
Transistor / transistor
R
thJC
0,023 °C/W
0,046 °C/W
0,044 °C/W
0,088 °C/W
0,01 °C/W
0,02 °C/W
150 °C
-40...+150 °C
-40...+125 °C
übergangs-Wrmewiderstand
thermal resistance, case to heatsink
R
thCK
Hchstzul. Sperrschichttemperatur
Betriebstemperatur
Lagertemperatur
max. junction temperature
operating temperature
storage temperature
t
vj max
t
c op
t
stg
Mechanische Eigenschaften / Mechanical properties
Gehuse, siehe Anlage
Innere Isolation
Anzugsdrehmoment f. mech. Befestigung
Anzugsdrehmoment f. elektr. Anschlüsse
case, see appendix
internal insulation
mounting torque
terminal connection torque
Seite / page
1
AI
2
O
3
terminals M6 /
tolerance +/-15%
terminals M4 /
tolerance +/-15%
terminals M8
M1
M2
5 Nm
2 Nm
8...10 Nm
ca. 1500 g
Gewicht
weight
G
Bedingung für den Kurzschluschutz / Conditions for short-circuit protection
t
fg
= 10 μs
v
L
= ±15 V
R
GF
= R
GR
= 3,6
t
vj
= 125°C
V
CC
= 750 V
v
CEM
= 900 V
i
CMK1
3500 A
i
CMK2
3000 A
Unabhngig davon gilt bei abweichenden Bedingungen / with regard to other conditions
CEM
= V
CES
- 20nH x |di
c
/dt|
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den
zugehrigen Technischen Erluterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in
combination with the belonging technical notes.
v
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