參數(shù)資料
型號: FDZ2554P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Monolithic Common Drain P-Channel 2.5V Specified PowerTrench
中文描述: 6.5 A, 20 V, 0.028 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
封裝: ULTRA THIN, BGA-18
文件頁數(shù): 2/6頁
文件大?。?/td> 183K
代理商: FDZ2554P
FDZ2554P Rev C5 (W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min Typ Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
Drain–Source Breakdown Voltage V
GS
= 0 V, I
D
= –250
μ
A
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
–20
V
I
D
= –250
μ
A, Referenced to 25
°
C
–13
mV/
°
C
V
DS
= –16 V,
V
GS
=
±
12 V,
V
GS
= 0 V
V
DS
= 0 V
–1
±
100
μ
A
nA
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to 25
°
C
V
GS
= –4.5 V, I
D
= –6.5 A
V
GS
= –2.5 V, I
D
= –5 A
V
GS
= –4.5 V, I
D
= –6.5 A, T
J
=125
°
C
V
DS
= –5 V,
I
D
= –6.5 A
–0.6
–0.8
3
–1.5
V
mV/
°
C
21
36
30
24
28
45
43
m
g
FS
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
Forward Transconductance
S
1430
319
164
9.2
pF
pF
pF
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 15 mV,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
12
9
62
37
14
3
4
22
18
100
60
20
ns
ns
ns
ns
nC
nC
nC
V
DD
= –10 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –6.5 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
–1.75
–1.2
A
V
V
GS
= 0 V,
S
= –1.75 A
(Note 2)
–0.7
25
20
ns
nC
I
F
= –6.5 A,
d
iF
/d
t
= 100 A/μs
Notes:
1.
R
θ
JA
is determined with the device mounted on a 1 in2 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the
junction to the circuit board side of the solder ball, R
θ
, is defined for reference. For R
θ
JC
, the thermal reference point for the case is defined as the
top surface of the copper chip carrier. R
θ
JC
and R
θ
JB
are guaranteed by design while R
θ
JA
is determined by the user's board design.
a)
60°C/W when mounted
on a 1in
2
pad of 2 oz
copper
b)
108°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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