參數(shù)資料
型號(hào)： FDU8878
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench MOSFET
中文描述： 35 A, 30 V, 0.0185 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
封裝： IPAK-3
文件頁(yè)數(shù)： 3/12頁(yè)
文件大?。?/td> 240K
代理商： FDU8878
2005 Fairchild Semiconductor Corporation
FDD8878 / FDU8878 Rev. A3
www.fairchildsemi.com
F
3
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
R
G
Gate Resistance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(5)
Total Gate Charge at 5V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Package current limitation is 35A.
2:
Starting T
= 25°C, L = 65uH, I
= 28A, V
= 27V, V
GS
= 10V.
3:
FDD8878_NL / FDU8878_NL is lead free product.
FDD8878_NL / FDU8878_NL marking will appear on the reel label.
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
-
-
880
195
110
3.1
19
10
0.9
2.6
1.7
4.5
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
nC
V
GS
= 0.5V, f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V
I
D
= 35A
I
g
= 1.0mA
26
14
1.3
-
-
-
V
DD
= 15V, I
D
= 35A
V
GS
= 4.5V, R
GS
= 16
-
-
-
-
-
-
-
7
129
-
-
-
-
97
ns
ns
ns
ns
ns
ns
79
38
27
-
V
SD
Source to Drain Diode Voltage
I
SD
= 35A
I
SD
= 3.2A
I
SD
= 35A, dI
SD
/dt = 100A/
μ
s
I
SD
= 35A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
23
9
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
相關(guān)PDF資料
PDF描述
FDD8878 N-Channel PowerTrench MOSFET
FDU8880 N-Channel PowerTrench MOSFET 30V, 58A, 10m
FDU8882 N-Channel PowerTrench MOSFET
FDD8882 N-Channel PowerTrench MOSFET
FDD8882_NL N-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDU8878_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET 30V, 40A, 15m ohm
FDU8880 功能描述:MOSFET 30V 58A 10 OHM NCH PWR TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDU8880_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET
FDU8882 功能描述:MOSFET 30V 55A 11 OHM NCH PWR TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDU8882_NL 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET
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