參數(shù)資料
型號: FDU8882
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET
中文描述: 35 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
封裝: IPAK-3
文件頁數(shù): 1/12頁
文件大?。?/td> 277K
代理商: FDU8882
2004 Fairchild Semiconductor Corporation
FDD8882/FDU8882 Rev. 1.0.0
November 2004
www.fairchildsemi.com
F
1
FDD8882 / FDU8882
N-Channel PowerTrench
MOSFET
30V, 55A, 11.5m
Features
!
r
DS(ON)
= 11.5m
, V
GS
= 10V, I
D
= 35A
!
r
DS(ON)
= 15m
, V
GS
= 4.5V, I
D
= 35A
!
High performance trench technology for extremely low
r
DS(ON)
!
Low gate charge
!
High power and current handling capability
Application
!
DC/DC converters
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
D
G
S
G D S
I-PAK
(TO-251AA)
G
S
D
D-PAK
(TO-252)
相關PDF資料
PDF描述
FDD8882 N-Channel PowerTrench MOSFET
FDD8882_NL N-Channel PowerTrench MOSFET
FDU8882_NL N-Channel PowerTrench MOSFET
FDU8896 N-Channel PowerTrench MOSFET
FDD8896 N-Channel PowerTrench MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
FDU8882_NL 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET
FDU8896 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDU8896_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
FDU8896_Q 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDUE0630-H-R24M=P3 制造商:TOKO Inc 功能描述: