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參數(shù)資料
| 型號(hào)： | FDS9953A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual 30V P-Channel PowerTrench MOSFET |
| 中文描述： | 2.9 A, 30 V, 0.13 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | FDS9953A |
FDS9953A Rev B(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current V
DS
= –24 V,
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= –250
μ
A
–30
V
BV
DSS
T
J
I
DSS
I
GSSF
I
GSSR
I
D
= –250
μ
A, Referenced to 25
°
C
–23
mV/
°
C
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–2
–100
100
μ
A
nA
nA
V
GS
= –25 V,
V
GS
= 25 V,
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to 25
°
C
–1
–1.8
4
–3.0
V
mV/
°
C
V
GS
= –10 V, I
D
= –1 A
V
GS
= –10 V, I
D
= –1 A, T
J
=125
°
C
V
GS
= –4.5 V, I
D
= –0.5 A
V
GS
= –4.5 V, I
D
= –0.5 A, T
J
=125
°
C
V
GS
= –10 V,
V
DS
= –5 V
V
GS
= –4.5 V,
V
DS
= –5 V
95
137
142
202
130
200
200
310
m
–5
–1.5
I
D(on)
On–State Drain Current
A
g
FS
Forward Transconductance
V
DS
= –15 V,
I
D
= –1 A
4
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
185
56
26
pF
pF
pF
V
DS
= –15 V,
V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
4.5
13
11
2
2.5
0.8
0.9
9
23
20
4
3.5
ns
ns
ns
ns
nC
nC
nC
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –5 V,
V
GS
= –10 V
I
D
= –1 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Reverse Recovery Time
–1.2
1.3
A
V
V
GS
= 0 V, I
S
= –1.3 A
(Note 2)
–0.8
V
GS
= 0 V, I
F
= –1.25A,
dI
F
/dt = 100A/
μ
s
17
100
nS
F
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