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參數(shù)資料
| 型號(hào)： | FDS8962C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N & P-Channel Power Trench |
| 中文描述： | 7 A, 30 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOP-8 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 185K |
| 代理商： | FDS8962C |
FDS8962C Rev A (W)
Electrical Characteristics
(continued)
Symbol
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Type
Min
Typ
Max
Units
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
8
7
5
13
23
14
3
9
10.7
9.6
1.7
2.2
2.1
1.7
16
14
10
24
37
25
6
17
26
13
ns
ns
ns
ns
nC
nC
nC
Q1
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
Q2
V
DD
= -15 V, I
D
= -1 A,
V
GS
= -10V, R
GEN
= 6
Q1
V
DS
= 15 V, I
D
= 7 A, V
GS
= 10 V
Q2
V
DS
= -15 V, I
D
= -5 A,V
GS
= -10 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
1.3
-1.3
1.2
-1.2
A
V
nS
V
SD
Drain-Source Diode Forward
Voltage
Diode Reverse Recovery
Time
Diode Reverse Recovery
Charge
V
GS
= 0 V, I
S
= 1.3 A
V
GS
= 0 V, I
S
= -1.3 A
Q1
I
= 7 A, d
iF
/d
t
= 100 A/μs
Q2
I
F
= -5 A, d
iF
/d
t
= 100 A/μs
(Note 2)
(Note 2)
0.75
-0.88
19
19
9
6
t
rr
Q
rr
nC
Notes:
1.
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 78°/W when
mounted on a
0.5 in
pad of 2 oz
copper
b) 125°W when
mounted on a .02 in
2
pad of 2 oz copper
c) 135°W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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