參數(shù)資料
型號(hào): FDS8978
廠(chǎng)商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): JFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 6.9 A, 30 V, 0.018 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁(yè)數(shù): 1/9頁(yè)
文件大小: 439K
代理商: FDS8978
July 2005
F
2005 Fairchild Semiconductor Corporation
FDS8978 Rev. A
www.fairchildsemi.com
1
FDS8978
Dual N-Channel PowerTrench
MOSFET
30V, 7.5A, 18m
Features
r
DS(ON)
= 18m
, V
GS
= 10V, I
D
= 7.5A
r
DS(ON)
= 21m
, V
GS
= 4.5V, I
D
= 6.9A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
100% Rg Tested
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
θ
JA
= 78
o
C/W)
Continuous (T
A
= 25
o
C, V
GS
= 4.5V, R
θ
JA
= 78
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
7.5
6.9
A
A
A
Figure 4
57
1.6
13
-55 to 150
E
AS
mJ
W
P
D
mW/
o
C
o
C
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Ambient (Note 2)
Thermal Resistance, Junction to Ambient (Note 3)
Thermal Resistance, Junction to Ambient (Note 4)
78
170
183
o
C/W
o
C/W
o
C/W
Device Marking
FDS8978
Device
FDS8978
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
Q2
5
8
7
6
1
2
3
4
Q1
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